PSMN3R3-40YS NXP Semiconductors, PSMN3R3-40YS Datasheet - Page 7

• Manufacturer Part Number: PSMN3R3-40YS
• Description: MOSFET,N CH,40V,100A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R3-40YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN3R3-40YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
fs
100
D
100
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
0.25
10
20
8
…continued
0.5
40
6
0.75
60
V
GS
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003aae213
003aae211
V
(V) = 4.5
I
D
DS
(A)
(V)
5.5
Rev. 04 — 25 October 2010
80
Conditions
I
see
I
V
1
S
S
GS
= 25 A; V
= 40 A; dI
Figure 17
= 0 V; V
N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 20 V
(pF)
(A)
I
C
6000
4000
2000
D
80
60
40
20
0
0
function of gate-source voltage; typical values
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
Input and reverse transfer capacitances as a
j
0
0
= 25 °C;
3
2
PSMN3R3-40YS
T
j
Min
-
-
-
= 175 °C
6
4
Typ
0.82
44
48
9
© NXP B.V. 2010. All rights reserved.
V
T
GS
003aae212
V
003aae214
j
= 25 °C
GS
(V)
C
C
Max
1.2
-
-
rss
(V)
iss
12
6
Unit
V
ns
nC
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