SUP90N15-18P-E3 Vishay, SUP90N15-18P-E3 Datasheet - Page 4
![MOSFET, N, TO-220](/photos/19/8/190895/42334027_sml.jpg)
SUP90N15-18P-E3
Manufacturer Part Number
SUP90N15-18P-E3
Description
MOSFET, N, TO-220
Manufacturer
Vishay
Datasheet
1.SUP90N15-18P-E3.pdf
(6 pages)
Specifications of SUP90N15-18P-E3
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Configuration
Single
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
3.75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP90N15-18P-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SUP90N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 1.0
- 1.6
- 2.2
0.01
100
0.1
0.8
0.2
10
10
8
6
4
2
0
- 50
1
0.0
0
I
D
- 25
= 85 A
Source-Drain Diode Forward Voltage
0.2
V
0
SD
20
Q
T
g
- Source-to-Drain Voltage (V)
Threshold Voltage
J
0.4
- Total Gate Charge (nC)
= 150 °C
25
T
V
J
DS
- Temperature (°C)
Gate Charge
= 75 V
50
0.6
40
75
I
100
0.8
D
T
V
= 250 µA
J
DS
= 25 °C
60
I
= 120 V
125
D
= 1 mA
1.0
150
175
80
1.2
1000
0.01
100
190
180
170
160
150
140
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
1
- 50
Drain-Source Breakdown vs. Junction Temperature
- 50
0.1
Single Pulse
* V
On-Resistance vs. Junction Temperature
by r
T
I
I
- 25
- 25
D
Safe Operating Area, Junction-to-Case
D
Limited
C
GS
= 1 mA
= 20 A
= 25 °C
DS(on)*
> minimum V
V
1.0
DS
0
0
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
T
25
25
J
- Temperature (°C)
GS
50
50
at which r
10
75
75
S-80181-Rev. A, 04-Feb-08
Document Number: 69935
100
DS(on)
100
100
125
is specified
125
100 ms, DC
10 µs
100 µs
1 ms
10 ms
150
150
1000
175
175