SUP90N15-18P-E3 Vishay, SUP90N15-18P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP90N15-18P-E3
• Description: MOSFET, N, TO-220
• Manufacturer: Vishay

Specifications of SUP90N15-18P-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 90A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 3.75 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUP90N15-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 1.0
- 1.6
- 2.2
0.01
100
0.1
0.8
0.2
10
10
8
6
4
2
0
- 50
1
0.0
0
I
D
- 25
= 85 A
Source-Drain Diode Forward Voltage
0.2
V
0
SD
20
Q
T
g
- Source-to-Drain Voltage (V)
Threshold Voltage
J
0.4
- Total Gate Charge (nC)
= 150 °C
25
T
V
J
DS
- Temperature (°C)
Gate Charge
= 75 V
50
0.6
40
75
I
100
0.8
D
T
V
= 250 µA
J
DS
= 25 °C
60
I
= 120 V
125
D
= 1 mA
1.0
150
175
80
1.2
1000
0.01
100
190
180
170
160
150
140
0.1
10
3.0
2.5
2.0
1.5
1.0
0.5
1
- 50
Drain-Source Breakdown vs. Junction Temperature
- 50
0.1
Single Pulse
* V
On-Resistance vs. Junction Temperature
by r
T
I
I
- 25
- 25
D
Safe Operating Area, Junction-to-Case
D
Limited
C
GS
= 1 mA
= 20 A
= 25 °C
DS(on)*
> minimum V
V
1.0
DS
0
0
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
T
25
25
J
- Temperature (°C)
GS
50
50
at which r
10
75
75
S-80181-Rev. A, 04-Feb-08
Document Number: 69935
100
DS(on)
100
100
125
is specified
125
100 ms, DC
10 µs
100 µs
1 ms
10 ms
150
150
1000
175
175