SUP90N15-18P-E3 Vishay, SUP90N15-18P-E3 Datasheet - Page 5

MOSFET, N, TO-220

SUP90N15-18P-E3

Manufacturer Part Number
SUP90N15-18P-E3
Description
MOSFET, N, TO-220
Manufacturer
Vishay
Datasheet

Specifications of SUP90N15-18P-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
90A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Configuration
Single
Resistance Drain-source Rds (on)
0.018 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
3.75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP90N15-18P-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SUP90N15-18P-E3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 69935
S-80181-Rev. A, 04-Feb-08
100
80
60
40
20
0
0
0.01
Package Limited
0.1
1
http://www.vishay.com/ppg?69935.
10
Current Derating*, Junction-to-Case
25
-4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
D
T
50
C
is based on T
- Case Temperature (°C)
0.05
75
100
J(max)
Normalized Thermal Transient Impedance, Junction-to-Case
10
125
-3
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
150
175
Square Wave Pulse Duration (s)
10
-2
500
450
400
350
300
250
200
150
100
50
0
0
25
Power Derating*, Junction-to-Case
50
T
J
- Temperature (°C)
10
75
-1
SUP90N15-18P
100
Vishay Siliconix
125
www.vishay.com
150
175
1
5

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