2N6661 Vishay, 2N6661 Datasheet - Page 4

• Manufacturer Part Number: 2N6661
• Description: N CH MOSFET, 90V, 900mA, TO-205AD
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of 2N6661

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 860mA
• Drain Source Voltage Vds: 90V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.6V
• Configuration: Single
• Resistance Drain-source Rds (on): 4 Ohms
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.9 A
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Stud
• Package / Case: TO-205AD
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4Ohm
• Drain-source On-volt: 90V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-205AD
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

www.vishay.com
11-4
2N6661/VN88AFD
Vishay Siliconix
0.01
15.0
12.5
10.0
0.01
0.1
7.5
5.0
2.5
10
1.0
0.1
1
0
0.1
0.5
0
Duty Cycle = 0.5
0.2
0.1
I
V
T
D
GS
J
= 150_C
= 1.0 A
= 5 V
100
0.01
V
GS
Q
1.0
0.02
g
– Gate-to-Source Voltage (V)
Threshold Region
– Total Gate Charge (pC)
125_C
Gate Charge
200
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)
0.05
1.0
V
Single Pulse
25_C
DS
1.5
300
= 45 V
–55_C
72 V
400
2.0
t
1
– Square Wave Pulse Duration (sec)
500
_
10
125
100
100
100
75
50
25
10
0
1
0.1
0
V
R
V
I
D
DD
GS
L
V GS = 0 V
f = 1 MHz
= 1.0 A
t
t
Load Condition Effects on Switching
d(off)
d(on)
= 23 W
= 25 V
= 0 to 10 V
C rss
t
t
r
f
V
10
DS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
P
– Drain-to-Source Voltage (V)
C oss
DM
I
D
JM
– Drain Current (A)
Capacitance
– T
20
t
1
C iss
C
1 K
= P
t
2
DM
Z
thJC
thJC
t
t
30
1
2
S-04279—Rev. C, 16-Jul-01
(t)
Document Number: 70224
= 20_C/W
1
40
10 K
50
2