2N6661 Vishay, 2N6661 Datasheet - Page 4
![N CH MOSFET, 90V, 900mA, TO-205AD](/photos/22/17/221745/4386967_sml.jpg)
2N6661
Manufacturer Part Number
2N6661
Description
N CH MOSFET, 90V, 900mA, TO-205AD
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet
1.2N6661.pdf
(5 pages)
Specifications of 2N6661
Transistor Polarity
N Channel
Continuous Drain Current Id
860mA
Drain Source Voltage Vds
90V
On Resistance Rds(on)
4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.6V
Configuration
Single
Resistance Drain-source Rds (on)
4 Ohms
Drain-source Breakdown Voltage
90 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.9 A
Power Dissipation
6.25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Stud
Package / Case
TO-205AD
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
4Ohm
Drain-source On-volt
90V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-205AD
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6661
Manufacturer:
SSI
Quantity:
20 000
www.vishay.com
11-4
2N6661/VN88AFD
Vishay Siliconix
0.01
15.0
12.5
10.0
0.01
0.1
7.5
5.0
2.5
10
1.0
0.1
1
0
0.1
0.5
0
Duty Cycle = 0.5
0.2
0.1
I
V
T
D
GS
J
= 150_C
= 1.0 A
= 5 V
100
0.01
V
GS
Q
1.0
0.02
g
– Gate-to-Source Voltage (V)
Threshold Region
– Total Gate Charge (pC)
125_C
Gate Charge
200
Normalized Effective Transient Thermal Impedance, Junction-to-Case (2N6661)
0.05
1.0
V
Single Pulse
25_C
DS
1.5
300
= 45 V
–55_C
72 V
400
2.0
t
1
– Square Wave Pulse Duration (sec)
500
_
10
125
100
100
100
75
50
25
10
0
1
0.1
0
V
R
V
I
D
DD
GS
L
V GS = 0 V
f = 1 MHz
= 1.0 A
t
t
Load Condition Effects on Switching
d(off)
d(on)
= 23 W
= 25 V
= 0 to 10 V
C rss
t
t
r
f
V
10
DS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
P
– Drain-to-Source Voltage (V)
C oss
DM
I
D
JM
– Drain Current (A)
Capacitance
– T
20
t
1
C iss
C
1 K
= P
t
2
DM
Z
thJC
thJC
t
t
30
1
2
S-04279—Rev. C, 16-Jul-01
(t)
Document Number: 70224
= 20_C/W
1
40
10 K
50
2