IRF620STRRPBF Vishay, IRF620STRRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF620STRRPBF
• Description: N CH MOSFET, 200V, 5.2A, SMD-220
• Manufacturer: Vishay

Specifications of IRF620STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF620S, SiHF620S
Vishay Siliconix
www.vishay.com
4
91028_05
91028_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
750
600
450
300
150
20
16
12
8
4
0
0
10
0
I
0
D
= 4.8 A
V
DS ,
3
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
6
DS
V
C
C
C
GS
iss
rss
oss
= 40 V
= C
= 0 V, f = 1 MHz
= C
V
= C
DS
10
gs
gd
ds
9
= 100 V
1
C
+ C
C
+ C
C
rss
V
oss
iss
DS
gd
gd
For test circuit
see figure 13
, C
= 160 V
12
ds
Shorted
15
91028_07
91028_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
10
0
2
1
5
2
5
2
5
2
1
0.5
0.1
Fig. 8 - Maximum Safe Operating Area
150
2
°
V
V
C
SD
5
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.8
1
2
25
T
T
Single Pulse
C
J
by R
= 150 °C
°
= 25 °C
5
C
1.0
10
DS(on)
S-82998-Rev. B, 12-Jan-09
Document Number: 91028
2
5
1.3
10
2
V
2
GS
10
100
1
10
ms
= 0 V
µs
ms
5
µs
1.5
10
3