IRF620STRRPBF Vishay, IRF620STRRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF620STRRPBF
• Description: N CH MOSFET, 200V, 5.2A, SMD-220
• Manufacturer: Vishay

Specifications of IRF620STRRPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.2A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SMD-220
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF620S, SiHF620S
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
0.01 Ω
L
91028_12c
150
250
200
100
300
50
0
25
V
DD
Starting T
= 50 V
+
-
V
50
DD
J
, Junction Temperature (°C)
75
100
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
125
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
2.3 A
3.3 A
5.2 A
GS
Same type as D.U.T.
I
D
Current regulator
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S-82998-Rev. B, 12-Jan-09
Document Number: 91028
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS