SI3805DV-T1-E3 Vishay, SI3805DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3805DV-T1-E3
• Description: P CHANNEL MOSFET, -20V, 3.3A, TSOP
• Manufacturer: Vishay

Specifications of SI3805DV-T1-E3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 175mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68912
S09-2110-Rev. B, 12-Oct-09
SPECIFICATIONS T
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
J
= 25 °C, unless otherwise noted
Symbol
Symbol
V
I
Q
V
I
C
J
I
SM
t
t
t
rm
SD
S
rr
a
b
rr
F
T
= 25 °C, unless otherwise noted
I
F
= - 2.4 A, dI/dt = 100 A/µs, T
I
V
S
I
V
V
F
r
r
= - 1.0 A, V
Test Conditions
Test Conditions
r
= 20 V, T
= 1 A, T
= 20 V, T
= 5 V, T
T
V
V
C
V
I
F
r
r
r
= 25 °C
= 20 V
= 10 V
= 1 A
= 5 V
J
J
J
J
= 125 °C
= 85 °C
= 125 °C
GS
= 85 °C
= 0 V
J
= 25 °C
Min.
Min.
- 0.75
0.015
Typ.
Typ.
0.42
0.36
0.50
0.02
0.7
23
14
11
12
60
Vishay Siliconix
5
Si3805DV
Max.
Max.
- 1.2
- 1.2
0.50
0.43
0.08
5.00
0.10
7.00
- 15
35
21
50
www.vishay.com
Unit
Unit
mA
nC
ns
ns
pF
A
V
V
3