SI3805DV-T1-E3 Vishay, SI3805DV-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI3805DV-T1-E3
• Description: P CHANNEL MOSFET, -20V, 3.3A, TSOP
• Manufacturer: Vishay

Specifications of SI3805DV-T1-E3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -3.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 175mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 68912
S09-2110-Rev. B, 12-Oct-09
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
A
Square Wave Pulse Duration (s)
10
= 25 °C, unless otherwise noted
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
- T
A
t
1
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
thJA
100
Si3805DV
(t)
t
t
1
2
= 130 °C/W
www.vishay.com
600
10
7