SI8441DB-T2-E1 Vishay, SI8441DB-T2-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8441DB-T2-E1
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI8441DB-T2-E1

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -10.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -350mV
• Power Dissipation Pd: 2.77W
• Configuration: Single Dual Drain Triple Source
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 2.77 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MICRO FOOT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74668
S-82119-Rev. C, 08-Sep-08
100
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
= 250 µA
SD
0
0.4
T
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
J
= 150 °C
25
- Temperature (°C)
0.6
50
0.8
75
0.01
100
0.1
1.0
10
1
100
0.1
T
Limited by R
J
Single Pulse
* V
Safe Operating Area, Junction-to-Ambient
= 25 °C
T
1.2
125
C
GS
= 25 °C
> minimum V
V
150
1.4
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
0.25
0.20
0.15
0.10
0.05
10
DS(on)
30
25
20
15
10
5
0
0.001
0
is specified
100 ms
1 s, 10 s
DC
100 µs
1 ms
10 ms
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
1
V
100
GS
0.1
- Gate-to-Source Voltage (V)
2
Pulse (s)
1
Vishay Siliconix
25 °C
3
10
125 °C
Si8441DB
I
D
www.vishay.com
= 1 A
4
100
1000
5
5