NTE5424 NTE ELECTRONICS, NTE5424 Datasheet

NTE5424

Manufacturer Part Number

NTE5424

Description

SILICON CONTROLLED RECTIFIER,400V V(DRM),4.7A I(T),TO-220

Manufacturer

NTE ELECTRONICS

Datasheet

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Description:

The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high−speed

switching applications such as power inverters, switching regulators, and high−current pulse applica-

tions. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used

at frequencies up to 25kHz.

Features:

D Fast Turn−Off Time

D High di/dt and dv/dt Capabilities

D Shorted−Emitter Gate−Cathode Construction

D Low Thermal Resistance

D Center−Gate Construction

Absolute Maximum Ratings:

Repetitive Peak Off−State Voltage (Gate Open, Note 1), V

Repetitive Peak Reverse Voltage (Gate Open, Note 1), V

RMS On−State Current (T

Average On−State Current (T

Peak Surge (Non−Repetitive) On−State Current (One Cycle), I

Peak Forward Gate Power Dissipation (10μs max, Note 2), P

Peak Reverse Gate Power Dissipation (10μs max, Note 2), P

Average Gate Power Dissipation (10ms max, Note 2), P

Rate of Change of On−State Current V

Fusing Current (T

Operating Case Temperature Range, T

Storage Temperature Range, T

Lead Temperature (During Soldering, 10sec max), T

Thermal Resistance, Junction−to−Case, R

Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively

Note 2. Any product of gate current and gate voltage which results in a gate power less than the max-

60Hz Sinusoidal

50Hz Sinusoidal

biased.

imum is permitted.

= +60°C, 8.3ms), I

for TV Power Supply Switching, TO220

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Silicon Controlled Rectifier (SCR)

= +60°C, t

stg

= +60°C, t

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 0.5), I

= 400V, I

thJC

NTE5424

= 0.5), I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T(RMS)

T(AV)

= 500mA, t

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

G(AV)

RRM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DRM

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RGM

. . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . .

TSM

. . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . .

= 0.5μs), di/dt

. . . . . . . . . . . . . . . . . . . . . . .

. . . . . . .

−40° to +100°C

−40° to +150°C

2.2°C/W

200A/μs

500mW

+225°C

26A

400V

5.0A

3.2A

13W

80A

75A

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NTE5424 Summary of contents

Page 1

... TV Power Supply Switching, TO220 Description: The NTE5424 is a silicon controlled rectifier (SCR TO220 type package designed for high−speed switching applications such as power inverters, switching regulators, and high−current pulse applica- tions. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25kHz ...

Page 2

Parameter Peak Forward Blocking Current Peak Reverse Blocking Current Forward ON Voltage Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC DC Holding Current Rate of Rise of Off−State Voltage Turn−On Time Circuit Commutated Turn−Off Time .147 (3.75) Dia ...

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