NTE5424 NTE ELECTRONICS, NTE5424 Datasheet - Page 2
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NTE5424
Manufacturer Part Number
NTE5424
Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),4.7A I(T),TO-220
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE5424.pdf
(2 pages)
Peak Forward Blocking Current
Peak Reverse Blocking Current
Forward ON Voltage
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
DC Holding Current
Rate of Rise of Off−State Voltage
Turn−On Time
Circuit Commutated Turn−Off Time
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
Cathode
.100 (2.54)
C
Symbol
I
I
dv/dt
V
V
DRM
RRM
I
I
t
GT
t
TM
GT
H
gt
q
.420 (10.67)
V
V
I
Anode Voltage = 12V, R
Anode Voltage = 12V, R
V
V
I
V
dv/dt = 100V/μs, −di/dt = −10A/μs,
I
V
TM
GT
GT
D
R
D
D
D
GK
= 400V, T
= 400V, T
= 400V, T
= 400V, I
= 400V, Pulse Duration = 50μs,
= 300mA, t
= 100mA at turn−on, I
= 30A
Max
= 0V at turn−off, T
Test Conditions
T
C
C
C
= 8A (Peak),
r
= +100°C
= +100°C
= +80°C
= 0.1μs
.250 (6.35)
Max
C
Gate
Anode/Tab
L
L
= +75°C
= 30Ω
= 30Ω
T
= 4A,
(12.7)
(12.7)
.110 (2.79)
.500
.500
Max
Min
Min
100
−
−
−
−
−
−
−
−
2.34
Typ
250
0.5
0.3
1.2
0.7
4.4
20
−
Max
3.0
1.5
4.0
2.5
50
50
−
−
−
Unit
V/μs
mA
mA
mA
mA
μs
μs
V
V