LM3046M National Semiconductor, LM3046M Datasheet - Page 2

• Manufacturer Part Number: LM3046M
• Description: TRANSISTOR ARRAY, NPN, 5, 15V, SOIC
• Manufacturer: National Semiconductor

Specifications of LM3046M

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 15V
• Transition Frequency Typ Ft: 550MHz
• Power Dissipation Pd: 750mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 100
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Collector to Base Breakdown Voltage (V
Collector to Emitter Breakdown Voltage (V
Collector to Substrate Breakdown
Voltage (V
Emitter to Base Breakdown Voltage (V
Collector Cutoff Current (I
Collector Cutoff Current (I
Static Forward Current Transfer
Ratio (Static Beta) (h
Input Offset Current for Matched
Pair Q
Base to Emitter Voltage (V
Magnitude of Input Offset Voltage for
Differential Pair |V
Magnitude of Input Offset Voltage for Isolated
Transistors |V
|V
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
Electrical Characteristics
(T
BE5
A
= 25˚C unless otherwise specified)
− V
1
and Q
BE3
(BR)CIO
|
BE3
2
|I
)
O1
Power Dissipation:
Collector to Emitter Voltage, V
Collector to Base Voltage, V
Collector to Substrate Voltage, V
Emitter to Base Voltage, V
Collector Current, I
Operating Temperature Range
Storage Temperature Range
Soldering Information
− V
BE1
T
T
T
T
T
Dual-In-Line Package Soldering (10 Sec.)
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
− I
FE
A
A
A
A
A
BE4
Parameter
− V
= 25˚C
= 25˚C to 55˚C
= 25˚C to 75˚C
IO2
>
>
)
|, |V
55˚C
75˚C
CBO
CEO
BE2
|
BE
BE4
)
|
)
)
− V
BE5
C
(BR)EBO
|,
(BR)CBO
(BR)CEO
EBO
CBO
)
CEO
)
(Note 1)
)
CIO
(Note 2)
I
I
I
I
V
V
V
V
V
V
V
C
C
C
E
CB
CE
CE
CE
CE
CE
CE
10 µA, I
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10V, I
= 10V, I
= 3V
= 3V, I
= 3V
= 3V, I
= 3V, I
2
Distributors for availability and specifications. (T
25˚C)
C
C
C
C
B
Conditions
= 0
E
CI
E
B
= 1 mA
= 1 mA
= 1 mA
= 0
= 0
= 0
= 0
= 0
Transistor
260˚C
215˚C
220˚C
Each
I
I
300
300
I
I
I
E
E
−40˚C to +85˚C
−65˚C to +85˚C
C
C
C
Derate at 6.67
15
20
20
50
= 1 mA
= 10 mA
5
= 10 mA
= 1 mA
= 10 µA
LM3046
Package
Total
750
750
Min
20
15
20
40
5
mW/˚C
mW/˚C
Units
mW
mW
mW
Typ
mA
0.002
0.715
0.800
Limits
0.45
0.45
V
V
V
V
100
100
0.3
60
24
60
54
7
Max
0.5
40
2
5
5
Units
A
mV
mV
nA
µA
µA
V
V
V
V
V
=