LM3046M National Semiconductor, LM3046M Datasheet - Page 3

TRANSISTOR ARRAY, NPN, 5, 15V, SOIC

LM3046M

Manufacturer Part Number
LM3046M
Description
TRANSISTOR ARRAY, NPN, 5, 15V, SOIC
Manufacturer
National Semiconductor
Datasheet

Specifications of LM3046M

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Transition Frequency Typ Ft
550MHz
Power Dissipation Pd
750mW
Dc Collector Current
50mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LM3046M
Manufacturer:
NS
Quantity:
434
Part Number:
LM3046M
Manufacturer:
ON
Quantity:
150
Part Number:
LM3046M
Manufacturer:
NS/国半
Quantity:
20 000
Company:
Part Number:
LM3046M
Quantity:
108
Company:
Part Number:
LM3046M
Quantity:
11 042
Part Number:
LM3046M/NOPB
Manufacturer:
FSC
Quantity:
12 000
Part Number:
LM3046MNOPB
Manufacturer:
ST
Quantity:
2 986
Part Number:
LM3046MX
Manufacturer:
NS
Quantity:
6
Part Number:
LM3046MX
Manufacturer:
NS/国半
Quantity:
20 000
Part Number:
LM3046MX/NOPB
Manufacturer:
TI
Quantity:
3 000
Low Frequency Noise Figure (NF)
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
Short Circuit Input Impednace (h
Open Circuit Output Impedance (h
Open Circuit Reverse Voltage Transfer Ratio (h
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
Input Admittance (Y
Output Admittance (Y
Reverse Transfer Admittance (Y
Gain Bandwidth Product (f
Emitter to Base Capacitance (C
Collector to Base Capacitance (C
Collector to Substrate Capacitance (C
Temperature Coefficient of Base to
Emitter Voltage
Collector to Emitter Saturation Voltage (V
Temperature Coefficient of
Input Offset Voltage
Electrical Characteristics
(T
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
A
= 25˚C unless otherwise specified)
Parameter
ie
)
oe
Parameter
)
T
)
EB
fe
re
ie
CB
)
)
)
fe
)
oe
)
)
)
CI
)
CE(SAT)
(Continued)
re
)
)
f = 1 kHz, V
I
f = 1 kHz, V
I
f = 1 MHz, V
I
V
V
V
V
C
C
C
CE
EB
CB
CS
= 100 µA, R
= 1 mA
= 1 mA
= 3V, I
= 3V, I
= 3V, I
= 3V, I
V
I
V
B
CE
CE
= 1 mA, I
Conditions
= 3V, I
= 3V, I
E
C
C
C
3
CE
CE
CE
= 0
= 3 mA
= 0
= 0
S
= 3V,
= 3V,
= 3V,
= 1 kΩ
C
C
C
Conditions
= 1 mA
= 1 mA
= 10 mA
Min
300
0.001+j 0.03
Min
0.3+J 0.04
See Curve
1.8 x 10
31 − j 1.5
3.25
15.6
0.58
Typ
110
550
3.5
0.6
2.8
Typ
Limits
−1.9
0.23
1.1
−4
Max
www.national.com
Max
mV/˚C
Units
µV/˚C
Units
µmho
kΩ
dB
pF
pF
pF
V

Related parts for LM3046M