MJ11032 MULTICOMP, MJ11032 Datasheet - Page 2
![BIPOLAR TRANSISTOR, NPN, 120V, TO-3](/photos/22/22/222257/4423690_sml.jpg)
MJ11032
Manufacturer Part Number
MJ11032
Description
BIPOLAR TRANSISTOR, NPN, 120V, TO-3
Manufacturer
MULTICOMP
Datasheet
1.MJ11032.pdf
(5 pages)
Specifications of MJ11032
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ11032
Manufacturer:
SGS
Quantity:
20 000
Part Number:
MJ11032G
Manufacturer:
ON/安森美
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics (T
MJ11032, 11033
Darlington Power Transistors
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
Collector Cut off Current
(V
Collector-Emitter Leakage Current
(V
(V
Emitter Cut off Current
(V
ON Characteristics (1)
DC Current Gain
(I
(I
Collector-Emitter Saturation Voltage
(I
(I
Base-Emitter Saturation Voltage
(I
(I
C
C
C
C
C
C
C
Thermal Resistance Junction to Case
CE
CE
CE
EB
= 100mA, I
= 25A, V
= 50A, V
= 25A, I
= 50A, I
= 25A, I
= 50A, I
= 50V, I
= 5.0V, I
= 120V, R
= 120V, R
B
B
B
B
CE
CE
B
= 200mA)
= 250mA)
= 500mA)
= 300mA)
Characteristic
C
B
= 0)
= 5.0V)
= 5.0V)
BE
BE
= 0)
= 0)
Figure - 1 Power Derating
= 1kΩ)
= 1kΩ, T
T
C
Characteristic
, Temperature (°C)
C
= 125°C)
C
= 25°C unless otherwise noted)
Symbol
Rθjc
Page 2
Maximum
0.584
V
Symbol
V
V
CEO(sus)
I
CE(sat)
I
I
BE(sat)
h
CEO
CER
EBO
FE
°C/W
Unit
Minimum
1000
120
400
-
-
-
-
-
Maximum
18,000
2.0
2.0
5.0
2.5
3.5
3.0
4.5
10
-
31/05/05 V1.0
Unit
mA
V
V
-