MJ11032 MULTICOMP, MJ11032 Datasheet - Page 4
MJ11032
Manufacturer Part Number
MJ11032
Description
BIPOLAR TRANSISTOR, NPN, 120V, TO-3
Manufacturer
MULTICOMP
Datasheet
1.MJ11032.pdf
(5 pages)
Specifications of MJ11032
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
120V
Power Dissipation Pd
300W
Dc Collector Current
50A
Dc Current Gain Hfe
1000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJ11032
Manufacturer:
SGS
Quantity:
20 000
Part Number:
MJ11032G
Manufacturer:
ON/安森美
Quantity:
20 000
Specifications
MJ11032, 11033
Darlington Power Transistors
maximum
I
C(av)
(A)
50
Active-Region Safe Operating Area (SOA)
V
CE
maximum
I
C
, Collector Emitter Voltage (Volts)
, Collector Current (AMP)
V
120
(V)
CEO
“ON” Voltages
at I
minimum
1000
C
h
FE
= 25A
at 25°C
P
300
(W)
tot
Page 4
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown
safe operating area curves indicate I
that must be observed for reliable operation i.e, the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of SOA curve is based on T
depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided T
temperatures, thermal limitation will reduce the power that can be
handled to values less than the limitations imposed by second
breakdown.
Package
TO-3
I
C
, Collector Current (AMP)
Type
NPN
PNP
“ON” Voltages
C
J(PK)
-V
Part Number
J(PK)
CE
MJ11032
MJ11033
= 200°C; T
limits of the transistor
≤200°C, At high case
31/05/05 V1.0
C
is variable