NTE251 NTE ELECTRONICS, NTE251 Datasheet
NTE251
Manufacturer Part Number
NTE251
Description
DARLINGTON TRANSISTOR, NPN, 100V, TO-3
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE251.pdf
(3 pages)
Specifications of NTE251
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
160W
Dc Collector Current
20A
Dc Current Gain Hfe
18000
Operating Temperature Range
-65°C To +200°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain @ I
D Collector–Emitter Sustaining Voltage: V
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
h
h
Continuous
Peak
Derate Above 25 C
FE
FE
= 2400 Typ (NTE251)
= 4000 Typ (NTE252)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE251 (NPN) & NTE252 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
C
stg
= 10A:
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO(sus)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V Min
–65 to +200 C
–65 to +200 C
0.915W/ C
1.09 C/W
500mA
160W
100V
100V
20A
40A
5V
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NTE251 Summary of contents
Page 1
... NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain @ 2400 Typ (NTE251) ...
Page 2
... Base–Emitter Saturation Voltage Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Magnitude of Common Emitter Small–Signal Short–Circuit Forward Current Transfer Ratio Output Capacitance NTE251 NTE252 Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% B NPN = +25 C unless otherwise specified) A Symbol ...
Page 3
Max .350 (8.89) .312 (7.93) Min Emitter .215 (5.45) .430 (10.92) Base .875 (22.2) Dia Max .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .188 (4.8) R Max .525 (13.35) R Max Collector/Case Seating Plane ...