NTE251 NTE ELECTRONICS, NTE251 Datasheet - Page 2

• Manufacturer Part Number: NTE251
• Description: DARLINGTON TRANSISTOR, NPN, 100V, TO-3
• Manufacturer: NTE ELECTRONICS

Specifications of NTE251

• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 100V
• Power Dissipation Pd: 160W
• Dc Collector Current: 20A
• Dc Current Gain Hfe: 18000
• Operating Temperature Range: -65°C To +200°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
Small–Signal Current Gain
Magnitude of Common Emitter
Output Capacitance
B
Small–Signal Short–Circuit
Forward Current Transfer Ratio
NTE251
NTE252
Parameter
NPN
A
V
Symbol
= +25 C unless otherwise specified)
V
V
V
CEO(sus)
CE(sat)
I
I
I
BE(sat)
BE(on)
|h
h
C
CEO
CEX
EBO
h
FE
fe
fe
ob
|
Schematic Diagram
I
V
V
V
T
V
V
V
I
I
I
V
V
V
V
C
C
C
C
A
CE
CE
CE
BE
CE
CE
CE
CE
CE
CB
= 100mA, I
= 10A, I
= 20A, I
= 20A, I
= +150 C
E
C
= 5V, I
= 50V, I
= 100V, V
= 100V, V
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 10V, I
Test Conditions
B
B
B
C
C
C
C
C
C
B
E
= 40mA
= 200mA
= 200mA
E
= 0
= 10A
= 20A
= 10A
= 10A, f = 1kHz
= 10A, f = 1MHz
B
= 0
= 0, f = 0.1MHz
BE(off)
BE(off)
= 0
= 1.5V
= 1.5V,
PNP
Min
100
750
100
300
4.0
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
18000
Max
400
600
1.0
0.5
5.0
2.0
2.0
3.0
4.0
2.8
–
–
–
–
MHz
Unit
mA
mA
mA
mA
pF
V
V
V
V
V
C
E