7MBP50RA-120-55 FUJI ELECTRIC, 7MBP50RA-120-55 Datasheet

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7MBP50RA-120-55

Manufacturer Part Number
7MBP50RA-120-55
Description
IGBT, 7 PACK MOD, 1200V, 50A, P610
Manufacturer
FUJI ELECTRIC
Datasheet
1.7MBP50RA-120-55.pdf (8 pages)

Specifications of 7MBP50RA-120-55

Transistor Polarity
N Channel
Dc Collector Current
50A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
357W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-20°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
7MBP50RA120
IGBT-IPM R series
Item
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current
DB
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply V
*4 Apply I
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Item
INV
DB
· Temperature protection provided by directly detecting the junction
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
temperature of the IGBTs
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
built-in control circuit
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Features
Maximum ratings and characteristics
Collector power dissipation
Collector current
Collector power dissipation
Forward current of Diode
Collector current at off signal input
Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
Collector-Emitter saturation voltage
Forward voltage of Diode
ALM
ALM
to terminal No. 16.
between terminal No. 16 and 10.
Mounting (M5)
Terminal (M5)
One transistor
One transistor
DC
DC
DC
1ms
1ms
Symbol
V
V
V
V
V
I
I
-I
P
I
I
I
P
T
V
V
I
V
I
T
T
V
C
CP
C
CP
in
ALM *4
F
op
C
j
stg
DC
DC(surge)
SC
CES
R
C
C
CC *1
in
ALM *3
iso *5
I
V
V
I
V
V
CES
CES
*2
CE(sat)
CE(sat)
F
F
Symbol
200
Min.
-40
-20
0
0
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-
-
-
V
Ic=50A
-Ic=50A
V
Ic=25A
-Ic=25A
Rating
CE
CE
=1200V input terminal open
=1200V input terminal open
1000
1200
1200
Max.
AC2.5
3.5 *
3.5 *
Condition
900
800
100
357
198
150
Vcc
125
100
50
50
25
50
25
20
Vz
15
1
6
6
Unit
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
1200V / 50A 7 in one-package
Fig.1 Measurement of case temperature
–
–
–
–
–
Min.
–
–
–
–
–
–
Typ.
1.0
2.6
3.0
2.6
3.3
1.0
Max.
mA
mA
V
V
V
V
Unit

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7MBP50RA-120-55 Summary of contents

Page 1

... IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · Compatible with existing IPM-N series packages · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level ...

Page 3

... Block diagram Outline drawings, mm IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Mass : 440g ...

Page 4

... Characteristics (Representative) Control Circuit Power supply current vs. Switching frequency Tj=100°C 40 P-side 35 N-side Switching frequency : fsw (kHz) Under voltage vs. Junction temperature Junction temperature : Tj (°C) Alarm hold time vs. Power supply voltage 3 2.5 2 1 Power supply voltage : Vcc (V) 2.5 Vcc=17V Vcc=15V Vcc=13V 1 ...

Page 5

... Inverter Collector current vs. Collector-Emitter voltage Tj=25° 0.5 1 1.5 Collector-Emitter voltage : Vce (V) Switching time vs. Collector current Edc=600V,Vcc=15V,Tj=25°C 10000 1000 100 Collector current : Ic (A) Forward current vs. Forward voltage 0.5 1 Forward voltage : Vf (V) Vcc=15V 80 Vcc=17V 70 Vcc=13V 2.5 3 10000 toff ton 1000 ...

Page 6

... Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width :Pw (sec) Power derating for IGBT (per device) 400 350 300 250 200 150 100 Case Temperature : Tc (°C) Switching Loss vs. Collector Current Edc=600V,Vcc=15V,Tj=25° Collector current : Ic (A) FWD 700 600 IGBT 500 ...

Page 7

... Over current protection vs. Junction temperature Vcc=15V 200 150 100 Junction temperature : Tj(°C) 80 100 120 140 IGBT-IPM ...

Page 8

... Brake C o lle cto r cu rren t vs. C ollec to r-E m itte r vo lta ° 0.5 1 Collector-Emitter voltage : Vce (V) Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width :Pw (sec) Power derating for IGBT (per device) 250 200 150 100 Case Temperature : Tc (°C) ...

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