NTE211 NTE ELECTRONICS, NTE211 Datasheet
NTE211
Manufacturer Part Number
NTE211
Description
TRANSISTOR,BJT,PNP,75V V(BR)CEO,1A I(C),TO-202
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE210.pdf
(2 pages)
Specifications of NTE211
Rohs Compliant
YES
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Description:
The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack-
age designed for general purpose, medium voltage, medium power amplifier and driver applications
such as series, shunt and switching regulators, and low and high frequency inverters and converters.
Features:
D TO202 Type Package: 2W Free Air Dissipation @ T
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Thermal Resistance, Junction–to–Case, R
Note 1. Pulse Test: Pulse Width
Note 2. The actual power dissipation capability of the TO202 type package is 2W @ T
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Continuous
Peak (Note 1)
Derate Above 25 C
Derate Above 25 C
Parameter
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
General Purpose Output & Driver
A
C
NTE210 (NPN) & NTE211 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C, Note 2), P
= +25 C), P
CEO
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
300 s.
(BR)CEO
I
I
CES
EBO
D
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CE
EB
= 10mA, I
= 5V
= 90V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
thJC
B
= 0
A
thJA
= +25 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . . . . . . . . . . .
Min
75
–
–
Typ
–
–
–
–55 to +150 C
–55 to +150 C
A
13.3mW/ C
Max
100
100
–
= +25 C.
50mW/ C
75 C/W
20 C/W
+260 C
1.67W
6.25W
Unit
nA
nA
V
75V
90V
5V
1A
2A
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NTE211 Summary of contents
Page 1
... General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack- age designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and converters. ...
Page 2
... Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Current–Gain Bandwidth Product Collector–Base Capacitance NTE210 NTE211 Note 3. Pulse Test: Pulse Width .500 (12.7) 1.200 (30.48) Ref .300 (7.62) .400 (10 ...