SQD40N10-25-GE3 Vishay, SQD40N10-25-GE3 Datasheet - Page 2
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SQD40N10-25-GE3
Manufacturer Part Number
SQD40N10-25-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,TO-252
Manufacturer
Vishay
Datasheet
1.SQD40N10-25-GE3.pdf
(7 pages)
Specifications of SQD40N10-25-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.019ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
136W
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
SQD40N10-25
Vishay Siliconix
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics
Pulsed Current
Forward Voltage
c
b
c
a
c
c
c
c
c
a
b
C
= 25 °C, unless otherwise noted)
a
SYMBOL
R
V
I
t
t
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
D(on)
d(off)
I
GSS
DSS
d(on)
g
Q
SM
t
t
DS
oss
SD
iss
rss
gs
gd
fs
r
f
g
b
V
V
V
V
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
I
D
= 4.5 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= 0 V
40 A, V
V
V
V
V
DD
DS
V
TEST CONDITIONS
DS
GS
I
DS
F
= 50 V, R
= 0 V, V
= 40 A, V
= V
= 0 V, I
= 15 V, I
GEN
V
V
GS
DS
DS
I
I
V
V
D
D
DS
, I
DS
= 40 A, T
= 40 A, T
= 10 V, R
= 100 V, T
= 100 V, T
D
GS
D
= 25 V, f = 1 MHz
L
GS
= 50 V, I
= 250 μA
V
D
= 250 μA
= 1.25
= ± 20 V
DS
V
I
I
= 40 A
D
D
= 0 V
DS
= 40 A
= 20 A
= 100 V
5 V
J
J
g
J
J
= 125 °C
= 175 °C
D
= 1
= 125 °C
= 175 °C
= 40 A
MIN.
100
1.5
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-1997-Rev. B, 20-Sep-10
Document Number: 69064
0.019
0.021
TYP.
2703
312
127
8.2
0.9
73
46
13
11
11
27
6
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.025
0.050
0.063
0.029
3380
250
390
160
160
2.5
1.0
1.5
50
70
17
17
41
9
-
-
-
-
-
UNIT
nC
nA
μA
pF
ns
A
S
A
V
V