SQD40N10-25-GE3 Vishay, SQD40N10-25-GE3 Datasheet - Page 3

• Manufacturer Part Number: SQD40N10-25-GE3
• Description: MOSFET,N CH,W DIODE,100V,40A,TO-252
• Manufacturer: Vishay

Specifications of SQD40N10-25-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.019ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Power Dissipation: RoHS Compliant
• Power Dissipation Pd: 136W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS (T
Document Number: 69064
S10-1997-Rev. B, 20-Sep-10
0.10
0.08
0.06
0.04
0.02
120
100
1.5
1.2
0.9
0.6
0.3
80
60
40
20
0
0
0
0
0
0
On-Resistance vs. Drain Current
20
1
4
T
V
V
C
GS
Transfer Characteristics
DS
Output Characteristics
V
= 125 °C
T
- Gate-to-Source Voltage (V)
GS
- Drain-to-Source Voltage (V)
C
I
D
= 25 °C
= 10 V thru 5 V
- Drain Current (A)
40
2
8
V
60
12
3
GS
T
= 4.5 V
C
= - 55 °C
A
V
V
V
GS
GS
= 25 °C, unless otherwise noted)
GS
80
16
4
= 3 V
= 4 V
= 10 V
100
20
5
4000
3000
2000
1000
125
100
100
75
50
25
80
60
40
20
0
0
0
0
0
0
C
T
rss
C
12
20
= - 55 °C
1
V
V
DS
GS
Transfer Characteristics
C
iss
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Transconductance
oss
T
I
D
T
C
C
- Drain Current (A)
= 125 °C
24
Capacitance
40
= 125 °C
2
T
SQD40N10-25
C
Vishay Siliconix
= 25 °C
36
60
3
T
C
= 25 °C
www.vishay.com
T
C
48
80
= - 55 °C
4
100
60
5
3