SQD40N10-25-GE3 Vishay, SQD40N10-25-GE3 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SQD40N10-25-GE3
Manufacturer Part Number
SQD40N10-25-GE3
Description
MOSFET,N CH,W DIODE,100V,40A,TO-252
Manufacturer
Vishay
Datasheet
1.SQD40N10-25-GE3.pdf
(7 pages)
Specifications of SQD40N10-25-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.019ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Power Dissipation
RoHS Compliant
Power Dissipation Pd
136W
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS (T
Document Number: 69064
S10-1997-Rev. B, 20-Sep-10
0.10
0.08
0.06
0.04
0.02
120
100
1.5
1.2
0.9
0.6
0.3
80
60
40
20
0
0
0
0
0
0
On-Resistance vs. Drain Current
20
1
4
T
V
V
C
GS
Transfer Characteristics
DS
Output Characteristics
V
= 125 °C
T
- Gate-to-Source Voltage (V)
GS
- Drain-to-Source Voltage (V)
C
I
D
= 25 °C
= 10 V thru 5 V
- Drain Current (A)
40
2
8
V
60
12
3
GS
T
= 4.5 V
C
= - 55 °C
A
V
V
V
GS
GS
= 25 °C, unless otherwise noted)
GS
80
16
4
= 3 V
= 4 V
= 10 V
100
20
5
4000
3000
2000
1000
125
100
100
75
50
25
80
60
40
20
0
0
0
0
0
0
C
T
rss
C
12
20
= - 55 °C
1
V
V
DS
GS
Transfer Characteristics
C
iss
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Transconductance
oss
T
I
D
T
C
C
- Drain Current (A)
= 125 °C
24
Capacitance
40
= 125 °C
2
T
SQD40N10-25
C
Vishay Siliconix
= 25 °C
36
60
3
T
C
= 25 °C
www.vishay.com
T
C
48
80
= - 55 °C
4
100
60
5
3