AT-42035 Avago Technologies US Inc., AT-42035 Datasheet

RF Bipolar Transistor

AT-42035

Manufacturer Part Number
AT-42035
Description
RF Bipolar Transistor
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of AT-42035

Peak Reflow Compatible (260 C)
No
Frequency
6GHz
Noise Figure Typ
2dB
Current Rating
35mA
Gain
13.5dB
Power @ 1db Gain Compression, P1db
21
Leaded Process Compatible
No
C-e Breakdown Voltage
12V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-42035G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-42035
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Avago Technologies' AT-42035 is a general purpose NPN bipo-
lar transistor that offers excellent high frequency performance.
The AT-42035 is housed in a cost effective surface mount 100
mil micro-X package. The 4 micron emitter-to-emitter pitch
enables this transistor to be used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium
sized transistor with impedances that are easy to match for low
noise and medium power applications. This device is designed
for use in low noise, wideband amplifier, mixer and oscilla-
tor applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is fabricated using Avago’s
10 GHz f
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
T
Self-Aligned-Transistor (SAT) process. The die is
Features
• High Gain at 1 dB Compression:
• Low Noise Figure:
• High Gain-Bandwidth Product: 8.0 GHz Typical f
• Cost Effective Ceramic Microstrip Package
35 micro-X Package
High Output Power:
21.0 dBm Typical P
20.5 dBm Typical P
14.0 dB Typical G
9.5 dB Typical G
1.9 dB Typical NF
1 dB
O
1 dB
1 dB
1 dB
at 2.0 GHz
at 4.0 GHz
at 2.0 GHz
at 4.0 GHz
at 2.0 GHz
T

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AT-42035 Summary of contents

Page 1

... Description Avago Technologies' AT-42035 is a general purpose NPN bipo- lar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. ...

Page 2

... AT-42035 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C [2,3] P Power Dissipation T T Junction Temperature j T Storage Temperature STG Notes: 1. Permanent damage may occur if any of these limits are exceeded 25°C. case 3. Derate at 5.7 mW/°C for T > 95°C. ...

Page 3

... AT-42035 Typical Performance 25° 1.0 GHz 16 12 2.0 GHz 8 4.0 GHz (mA) C Figure 1. Insertion Power Gain vs. Collector Current and Frequency MSG 25 20 MAG 21E 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. ...

Page 4

... A model for this device is available in the DEVICE MODELS section. AT-42035 Noise Parameters Freq GHz dB 0.1 1.0 0.5 1.1 1.0 1.3 2.0 2.0 4 Mag ...

Page 5

... Ordering Information Part Numbers No. of Devices AT-42035G 100 35 micro-X Package Dimensions 4 EMITTER .085 2.15 BASE COLLECTOR 016 EMITTER .057 .010 .100 1.45 .25 2.54 .022 .455 .030 .56 11.54 .75 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. ...

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