AT-42086-TR1 Avago Technologies US Inc., AT-42086-TR1 Datasheet

AT-42086-TR1

Manufacturer Part Number

AT-42086-TR1

Description

BJT (Bipolar Junction Transistor)

Manufacturer

Avago Technologies US Inc.

Datasheet

1.AT-42086.pdf (5 pages)

Specifications of AT-42086-TR1

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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AT-42086

Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Data Sheet

Description

Avago’s AT-42086 is a general purpose NPN bipolar

transistor that offers excellent high frequency perfor-

mance. The AT-42086 is housed in a low cost surface

mount .085" diameter plastic package. The 4 micron

emitter-to-emitter pitch enables this transistor to be

used in many different functions. The 20 emitter finger

interdigitated geometry yields a medium sized transis-

tor with impedances that are easy to match for low

noise and medium power applications. Applications

include use in wireless systems as an LNA, gain stage,

buffer, oscillator, and mixer. An optimum noise match

near 50Ω up to 1 GHz, makes this device easy to use as

a low noise amplifier.

The AT-42086 bipolar transistor is fabricated using

Avago’s 10 GHz f

process. The die is nitride passivated for surface

protection. Excellent device uniformity, performance

and reliability are produced by the use of ion-implanta-

tion, self-alignment techniques, and gold metalization

in the fabrication of this device.

Self-Aligned-Transistor (SAT)

Features

• High Output Power:

• High Gain at 1 dB Compression:

• Low Noise Figure:

• High Gain-Bandwidth Product: 8.0 GHz Typical f

• Surface Mount Plastic Package

• Tape-and-Reel Packaging Option Available

• Lead-free Option Available

BASE

86 Plastic Package

Pin Connections

20.5 dBm Typical P

13.5 dB Typical G

1.9 dB Typical NF

EMITTER

1 dB

at 2.0 GHz

COLLECTOR

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