BLF6G10LS-135RN:11 NXP Semiconductors, BLF6G10LS-135RN:11 Datasheet - Page 5

• Manufacturer Part Number: BLF6G10LS-135RN:11
• Description: BLF6G10LS-135RN/LDMOST/TUBE-BU
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-135RN:11

• Transistor Type: LDMOS
• Frequency: 871.5MHz
• Gain: 21dB
• Voltage - Rated: 65V
• Current Rating: 32A
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 26.5W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063207112

NXP Semiconductors
8. Test information
BLF6G10-135RN_10LS-135RN_2
Product data sheet
Fig 4.
Fig 6.
input
50 Ω
(dB)
G
p
24
23
22
21
20
19
0
V
carrier spacing 5 MHz.
efficiency as function of average load power;
typical values
The drawing is not to scale.
Test circuit for operation at 800 MHz
2-carrier W-CDMA power gain and drain
DS
G
η
D
p
= 28 V; I
12
Dq
V
GG
= 950 mA; f
24
R1
C1
36
1
= 881 MHz; f
C3
48
P
001aah867
L(AV)
C2
2
(W)
= 886 MHz;
Rev. 02 — 21 January 2010
R2
60
50
40
30
20
10
0
(%)
η
D
C4
C5
Fig 5.
C12
C8
ACPR
(dBc)
−20
−30
−40
−50
C13
C9
C6
C7
0
V
carrier spacing 5 MHz.
2-carrier W-CDMA adjacent power channel
ratio as a function of average load power;
typical values
DS
C14
C10
BLF6G10(LS)-135RN
= 28 V; I
C15
C11
C18
Dq
C19
20
= 950 mA; f
R3
L1
Power LDMOS transistor
1
= 881 MHz; f
40
P
C16
L(AV)
© NXP B.V. 2010. All rights reserved.
C17
001aah868
C20
(W)
2
= 886 MHz;
60
V
001aah869
DD
output
50 Ω
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