BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 3
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BLF6G10LS-160RN:11
Manufacturer Part Number
BLF6G10LS-160RN:11
Description
BLF6G10LS-160RN/LDMOST/REEL13/
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10LS-160RN11.pdf
(11 pages)
Specifications of BLF6G10LS-160RN:11
Transistor Type
LDMOS
Frequency
922.5MHz
Gain
22.5dB
Voltage - Rated
65V
Current Rating
39A
Current - Test
1.2A
Voltage - Test
32V
Power - Output
32W
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
39A
Drain Source Voltage (max)
65V
Output Power (max)
32W
Power Gain (typ)@vds
22.5@32VdB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
13.5S
Drain Source Resistance (max)
70(Typ)@6.15Vmohm
Reverse Capacitance (typ)
4.2@32VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
27%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
934063282118
NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G10-160RN_10LS-160RN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
η
ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25
in
°
C unless otherwise specified
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from
junction to case
DS
= 32 V; I
DS
= 32 V; I
1
Rev. 02 — 21 January 2010
= 922.5 MHz; f
Dq
= 1200 mA; P
Dq
= 1200 mA; T
Conditions
T
P
2
case
L
= 927.5 MHz; f
Conditions
V
V
I
V
V
V
V
V
V
I
V
f = 1 MHz
= 32 W
D
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
L
= 1300 mA
= 7.5 A
= 80 °C;
= 160 W (CW); f = 960 MHz.
= 0 V; I
= 10 V; I
= 32 V;
= 0 V; V
= V
= 10 V
= 13 V; V
= 10 V; I
= V
= 0 V; V
case
BLF6G10(LS)-160RN
GS(th)
GS(th)
P
Conditions
P
P
P
= 25
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
= 0.72 mA
+ 3.75 V;
+ 3.75 V;
3
DS
= 216 mA
= 7.5 A
= 32 W
= 32 W
= 32 W
= 32 W
°
= 952.5 MHz; f
Type
BLF6G10-160RN
BLF6G10LS-160RN
= 32 V
= 32 V;
C; unless otherwise specified; in a
= 0 V
Power LDMOS transistor
Min
-
21
-
25
-
Min
65
1.4
1.7
-
30.6
-
-
-
-
4
= 957.5 MHz;
Typ
32
22.5
−8
27
−41
Typ
-
1.9
2.2
-
39
-
13.5
0.07
4.2
© NXP B.V. 2010. All rights reserved.
Typ
0.5
0.44
-
-
Max
-
2.4
2.7
5
-
450
-
-
-
Max
−5.5
-
−38
Unit
K/W
K/W
3 of 11
Unit
W
dB
dB
%
dBc
Unit
V
V
V
μA
A
nA
S
Ω
pF