BLF6G10LS-160RN:11 NXP Semiconductors, BLF6G10LS-160RN:11 Datasheet - Page 3

• Manufacturer Part Number: BLF6G10LS-160RN:11
• Description: BLF6G10LS-160RN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-160RN:11

• Transistor Type: LDMOS
• Frequency: 922.5MHz
• Gain: 22.5dB
• Voltage - Rated: 65V
• Current Rating: 39A
• Current - Test: 1.2A
• Voltage - Test: 32V
• Power - Output: 32W
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 39A
• Drain Source Voltage (max): 65V
• Output Power (max): 32W
• Power Gain (typ)@vds: 22.5@32VdB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 13.5S
• Drain Source Resistance (max): 70(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 4.2@32VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934063282118

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G10-160RN_10LS-160RN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
C
Symbol
P
G
RL
η
ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
th(j-case)
DS(on)
rs
p
= 25
in
°
C unless otherwise specified
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from
junction to case
DS
= 32 V; I
DS
= 32 V; I
1
Rev. 02 — 21 January 2010
= 922.5 MHz; f
Dq
= 1200 mA; P
Dq
= 1200 mA; T
Conditions
T
P
2
case
L
= 927.5 MHz; f
Conditions
V
V
I
V
V
V
V
V
V
I
V
f = 1 MHz
= 32 W
D
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
L
= 1300 mA
= 7.5 A
= 80 °C;
= 160 W (CW); f = 960 MHz.
= 0 V; I
= 10 V; I
= 32 V;
= 0 V; V
= V
= 10 V
= 13 V; V
= 10 V; I
= V
= 0 V; V
case
BLF6G10(LS)-160RN
GS(th)
GS(th)
P
Conditions
P
P
P
= 25
L(AV)
L(AV)
L(AV)
L(AV)
D
DS
DS
D
D
= 0.72 mA
+ 3.75 V;
+ 3.75 V;
3
DS
= 216 mA
= 7.5 A
= 32 W
= 32 W
= 32 W
= 32 W
°
= 952.5 MHz; f
Type
BLF6G10-160RN
BLF6G10LS-160RN
= 32 V
= 32 V;
C; unless otherwise specified; in a
= 0 V
Power LDMOS transistor
Min
-
21
-
25
-
Min
65
1.4
1.7
-
30.6
-
-
-
-
4
= 957.5 MHz;
Typ
32
22.5
−8
27
−41
Typ
-
1.9
2.2
-
39
-
13.5
0.07
4.2
© NXP B.V. 2010. All rights reserved.
Typ
0.5
0.44
-
-
Max
-
2.4
2.7
5
-
450
-
-
-
Max
−5.5
-
−38
Unit
K/W
K/W
3 of 11
Unit
W
dB
dB
%
dBc
Unit
V
V
V
μA
A
nA
S
Ω
pF