CM100DY-28H Powerex Inc, CM100DY-28H Datasheet - Page 2

• Manufacturer Part Number: CM100DY-28H
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,1.4kV V(BR)CES,100A I(C)
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM100DY-28H

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1400V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM100DY-28H
Dual IGBTMOD™ H-Series Module
100 Amperes/1400 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current
Peak Collector Current
Emitter Current
Emitter Current-Pulse
Maximum Collector Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* I
** Pulse width and repetition rate should be such that the device junction temp. (T
*** Junction temperature (T
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Emitter-Collector Voltage
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
E
, V
EC
, T
rr
, Q
rr
& di
E
/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
j
) should not increase beyond 150 C.
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
C
C
d(on)
d(off)
V
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
t
EC
ies
res
t
= 25 C unless otherwise specified
rr
r
f
G
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
j
V
) does not exceed T
I
C
CC
V
I
I
GE1
= 100A, V
E
E
= 800V, I
V
V
= 100A, di
= 100A, di
V
I
I
C
V
C
CC
I
CE
GE
= V
E
GE
= 10mA, V
= 100A, V
= 100A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 800V, I
= V
GE2
= 0V, V
Per FWDi
Per IGBT
GE
C
CES
GES
j(max)
= 100A, V
= 15V, R
E
E
= 15V, T
/dt = –300A/ s
/dt = –300A/ s
, V
, V
CE
GE
CE
C
GE
rating.
GE
CE
= 100A,
= 10V
= 15V
= 10V
= 0V
= 0V
G
= 0V
j
GE
= 125 C
= 3.1
Symbol
V
V
V
I
T
I
= 15V
EM
GES
I
RMS
CES
CM
P
I
T
E
stg
–
–
–
C
c
j
*
*
Min.
Min.
Min.
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CM100DY-28H
–40 to 150
–40 to 125
780***
200**
200**
1400
2500
100
100
270
17
26
20
2.95
Typ.
Typ.
Typ.
510
6.5
3.1
1.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max.
Max.
Max.
0.16
0.35
0.13
4.2*
250
400
300
500
300
1.0
0.5
8.0
3.8
–
–
–
20
4
7
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
Volts
Volts
Volts
Units
Units
Units
C
C
C/W
C/W
C/W
mA
nC
nF
nF
nF
ns
ns
ns
ns
ns
V
C
A