CM150DU-12F Powerex Inc, CM150DU-12F Datasheet - Page 4

• Manufacturer Part Number: CM150DU-12F
• Description: IGBT Module
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM150DU-12F

• Transistor Polarity: N Channel
• Power Dissipation Pd: 520W
• Collector Emitter Voltage V(br)ceo: 600V
• Continuous Collector Current Ic: 150A
• Collector Emitter Saturation Voltage Vce(sat): 2.2V
• Current Rating: 150A
• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 41nF @ 10V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DU-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
300
250
200
150
100
10
10
10
10
10
10
10
50
0
3
2
1
0
2
1
0
10
0
0
REVERSE RECOVERY CHARACTERISTICS
1
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
T
T
j
j
I
t
= 25°C
rr
rr
= 25°C
FORWARD CHARACTERISTICS
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
1.0
V
1
GE
FREE-WHEEL DIODE
= 20V
15
(TYPICAL)
(TYPICAL)
11
(TYPICAL)
2.0
10
2
7.5
2
8
E
10
, (AMPERES)
8.5
V
V
R
T
Inductive Load
9
9.5
CC
GE
j
G
= 25°C
3.0
= 4.2 Ω
EC
3
CE
= 300V
= ±15V
, (VOLTS)
, (VOLTS)
4.0
10
4
3
10
10
10
2
1
0
10
10
10
10
20
16
12
-1
8
4
0
3
2
1
0
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
I
C
GE
V
200
COLLECTOR-CURRENT, I
= 150A
GE
50
= 0V
= 15V
T
T
CAPACITANCE VS. V
COLLECTOR-EMITTER
400 600
j
j
GATE CHARGE, V
GATE CHARGE, Q
= 25°C
= 125°C
100
10
V
0
(TYPICAL)
(TYPICAL)
CC
150
= 200V
800
G
200
C
V
10
, (nC)
, (AMPERES)
1000 1200 1400
CC
GE
1
CE
= 300V
CE
250
C
, (VOLTS)
C
C
oes
res
ies
300
10
2
10
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
1
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
10
0
0
-3
Per Unit Base
R
R
Single Pulse
T
T
C
th(j-c)
th(j-c)
IMPEDANCE CHARACTERISTICS
j
GATE-EMITTER VOLTAGE, V
6
COLLECTOR CURRENT, I
SWITCHING CHARACTERISTICS
= 25°C
= 25°C
10
= 0.24°C/W (IGBT)
= 0.47°C/W (FWDi)
TRANSIENT THERMAL
COLLECTOR-EMITTER
8
-2
t
t
d(off)
d(on)
10
I
(IGBT & FWDi)
C
HALF-BRIDGE
10
= 60A
t
t
1
f
r
(TYPICAL)
(TYPICAL)
I
TIME, (s)
C
10
10
= 150A
12
I
C
-1
-5
= 300A
14
C
V
V
R
T
Inductive Load
10
, (AMPERES)
j
CC
GE
GE
G
= 125°C
2
10
10
= 4.2Ω
16
, (VOLTS)
= 300V
= ±15V
-4
0
18
10
10
10
20
-3
1
3
10
10
10
-1
-2
-3