CM200RL-12NF Powerex Inc, CM200RL-12NF Datasheet - Page 3

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CM200RL-12NF

Manufacturer Part Number
CM200RL-12NF
Description
IGBT Power Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200RL-12NF

Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
30nF @ 10V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Prx Availability
RequestQuote
Voltage
600V
Current
200A
Circuit Configuration
7-Pac
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-3015 x3.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200RL-12NF
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
CM200RL-12NF
Manufacturer:
MIT
Quantity:
20 000
Part Number:
CM200RL-12NFB
Quantity:
726
Part Number:
CM200RL-12NFB
Manufacturer:
MIT
Quantity:
20 000
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200RL-12NF
Six IGBTMOD™ + Brake NF-Series Module
200 Amperes/600 Volts
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance
External Gate Resistance
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
C
, T
f
measured point is just under the chips.
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
R
R
V
Symbol
Symbol
R
CE(sat)
t
t
th(j-c)
th(j-c)
I
I
C
GE(th)
C
C
d(on)
d(off)
V
CES
GES
th(c-f)
Q
Qrr
R
oes
t
t
EC
ies
res
t
rr
r
f
G
G
Q
D
j
j
= 25°C unless otherwise specified
Per 1/6 Module, Thermal Grease Applied
= 25°C unless otherwise specified
V
Inductive Load Switching Operation
CC
I
C
I
C
= 300V, I
= 200A, V
V
R
= 200A, V
Per FWDi 1/6 Module
V
Per IGBT 1/6 Module
CC
V
V
V
G
I
CE
GE1
C
GE
I
CE
E
= 3.1Ω, I
Test Conditions
= 300V, I
= 20mA, V
= 10V, V
Test Conditions
= 200A, V
= V
= V
= V
C
GE
= 200A, V
GES
CES
GE
GE2
= 15V, T
E
C
= 15V, T
GE
, V
, V
= 200A,
= 15V,
CE
= 200A,
GE
GE
CE
= 0V
= 10V
= 0V
GE
= 0V
= 0V
j
j
= 125°C
= 25°C
= 15V
Min.
Min.
3.1
6
800
Typ.
Typ.
1.7
1.7
4.8
0.051
7
Max.
30.0
Max.
0.14
0.22
120
100
300
300
150
1.0
0.5
2.2
3.7
1.2
2.8
31
8
°C/W
°C/W
Volts
Volts
Volts
Units
Volts
Units
°C/W
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf
Ω
3

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