CM200RL-12NF Powerex Inc, CM200RL-12NF Datasheet - Page 4

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CM200RL-12NF

Manufacturer Part Number
CM200RL-12NF
Description
IGBT Power Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet

Specifications of CM200RL-12NF

Configuration
Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
30nF @ 10V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Prx Availability
RequestQuote
Voltage
600V
Current
200A
Circuit Configuration
7-Pac
Rohs Compliant
Yes
Recommended Gate Driver
VLA504
Recommended Dc To Dc Converter
VLA106-15242 or VLA106-24242
Interface Circuit Ref Design
BG2B-3015 x3.5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Igbt Type
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM200RL-12NF
Manufacturer:
MITSUBISH
Quantity:
1 000
Part Number:
CM200RL-12NF
Manufacturer:
MIT
Quantity:
20 000
Part Number:
CM200RL-12NFB
Quantity:
726
Part Number:
CM200RL-12NFB
Manufacturer:
MIT
Quantity:
20 000
4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200RL-12NF
Six IGBTMOD™ + Brake NF-Series Module
200 Amperes/600 Volts
Electrical and Mechanical Characteristics, T
Brake Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Forward Voltage Drop
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
*T
C
, T
f
measured point is just under the chips.
R
R
V
V
Symbol
Symbol
CE(sat)
th(j-c)
th(j-c)
I
I
C
GE(th)
C
V
C
GES
CES
Q
oes
FM
ies
res
G
Q
D
j
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
V
CC
I
C
I
C
= 300V, I
= 100A, V
= 100A, V
V
Per IGBT 1/6 Module
Per FWDi 1/6 Module
V
V
CE
CE
GE
Test Conditions
= 10V, V
Test Conditions
I
= V
= V
F
C
I
C
GE
= 100A
= 100A, V
CES
GES
GE
= 10mA
= 15V, T
= 15V, T
GE
, V
, V
GE
CE
= 0V
GE
= 0V
= 0V
j
j
= 125°C
= 25°C
= 15V
Min.
Min.
5
Typ.
400
Typ.
1.7
1.7
6
Max.
15.0
Max.
0.23
0.41
1.0
7.5
0.5
2.2
1.9
0.6
2.6
°C/W
°C/W
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
nf
nf
nf

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