GA200TS60UPBF Vishay, GA200TS60UPBF Datasheet

GA200TS60UPBF

Manufacturer Part Number

GA200TS60UPBF

Description

TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,265A I(C)

Manufacturer

Vishay

Datasheet

1.GA200TS60UPBF.pdf (8 pages)

Specifications of GA200TS60UPBF

Configuration

Dual

Collector- Emitter Voltage Vceo Max

600 V

Continuous Collector Current At 25 C

265 A

Maximum Operating Temperature

+ 150 C

Maximum Gate Emitter Voltage

+/- 20 V

Minimum Operating Temperature

- 40 C

Mounting Style

Screw

Package / Case

INT-A-PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 8
Download datasheet (211Kb)

Document Number: 94545

Revision: 04-May-10

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector to emitter voltage

Continuous collector current

Pulsed collector current

Peak switching current

Peak diode forward current

Gate to emitter voltage

RMS isolation voltage

Maximum power dissipation

ELECTRICAL SPECIFICATIONS (T

PARAMETER

Collector to emitter breakdown voltage

Collector to emitter voltage

Gate threshold voltage

Temperature coeff. of threshold voltage

Forward transconductance

Collector to emitter leakage current

Diode forward voltage drop

Gate to emitter leakage current

CE(on)

at 200 A, 25 °C

CES

INT-A-PAK

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 200 A

For technical questions, contact:

ΔV

SYMBOL

1.74 V

SYMBOL

600 V

265 A

GE(th)

BR(CES)

CE(on)

GE(th)

CES

GES

ISOL

CES

= 25 °C unless otherwise specified)

/ΔT

Any terminal to case, t = 1 min

= 0.25 mA

= 200 A, V

= 25 °C

= 67 °C

= 25 °C

= 85 °C

= V

= 20 V, I

= 0 V, I

= 15 V, I

= 0 V, V

= ± 20 V

TEST CONDITIONS

, I

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high speed 8 kHz to

• Very low conduction and switching losses

• HEXFRED

• Industry standard package

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,

• Low EMI, requires less snubbing

= 1 mA

indmodules@vishay.com

= 0.25 mA

= 200 A

= 200 A, T

40 kHz in hard switching, > 200 kHz in resonant

mode

SMPS, welding

= 600 V

= 600 V, T

= 0 V

= 0 V, T

= 125 °C

antiparallel diodes with ultrasoft recovery

Vishay High Power Products

MIN.

600

GA200TS60UPbF

MAX.

2500

± 20

600

265

200

400

625

325

0.014

TYP.

1.74

1.79

- 11

220

4.4

4.2

4.4

MAX.

± 250

2.25

2.2

6.0

6.2

www.vishay.com

UNITS

mV/°C

Related parts for GA200TS60UPBF

GA200TS60UPBF Summary of contents

Page 1

... CES 600 200 200 ± GES GE For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products ® antiparallel diodes with ultrasoft recovery MAX. 600 265 200 400 400 400 ± 20 2500 625 325 MIN. TYP. MAX. 600 - - - 1.74 2.2 = 125 ° ...

Page 2

... GA200TS60UPbF Vishay High Power Products SWITCHING CHARACTERISTICS (T PARAMETER Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Total switching energy Turn-on delay time Rise time ...

Page 3

... Fig Typical Load Current vs. Frequency (Load Current = I of Fundamental) RMS 2.0 2.5 Fig Case Temperature vs. Maximum Collector Current 8.0 9.0 For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products For both: Duty cycle 125 ° °C sink Gate drive as specified Power Dissipation = ...

Page 4

... GA200TS60UPbF Vishay High Power Products 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 1E-005 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction to Case 400 135 200 400 600 Q - Total gate Charge (nC) G Fig Typical Gate Charge vs. Gate to Emitter Voltage 360 125 ° ...

Page 5

... Revision: 04-May-10 "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A 5. 6.0 2000 /dt F For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products 20000 15000 400 A, 125 °C 200 A, 125 °C 10000 100 A, 125 °C 400 A, 25 °C 200 A, 25 °C 5000 100 A, 2 5° ...

Page 6

... GA200TS60UPbF Vishay High Power Products Fig. 15a - Test Circuit for Measurement off(diode d(on) 90% Vge +Vge Vce 90% Ic 10% Vce Ic Ic td(off Fig. 15b - Test Waveforms for Circuit of Fig. 18a, Defining off d(off) www.vishay.com 6 "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 d(off t1+5µS ...

Page 7

... Current rating (200 = 200 A) - Circuit configuration (T = Half bridge) - INT-A-PAK - Voltage code (60 = 600 V) - Speed/type (U = Ultrafast IGBT) - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: indmodules@vishay.com GA200TS60UPbF Vishay High Power Products 480V @25° 480V Fig Pulsed Collector Current Test Circuit U PbF www.vishay.com/doc?95173 www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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