GA200TS60UPBF Vishay, GA200TS60UPBF Datasheet - Page 6

• Manufacturer Part Number: GA200TS60UPBF
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,265A I(C)
• Manufacturer: Vishay

Specifications of GA200TS60UPBF

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 265 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: INT-A-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

GA200TS60UPbF
Vishay High Power Products
www.vishay.com
6
Fig. 15b - Test Waveforms for Circuit of Fig. 18a,
+Vge
Fig. 15a - Test Circuit for Measurement of I
Ic
td(off)
E
10% Vce
on
, E
off(diode)
Defining E
t1
, t
Vce
rr
, Q
90% Vge
rr
Ic
off
, I
tf
, t
rr
, t
d(off)
d(on)
t2
90% Ic
, t
For technical questions, contact:
, t
Vce Ic dt
Fig. 15e - Macro Waveforms for Figure 18a's Test Circuit
f
Eoff =
r
, t
5% Ic
d(off)
t0
t1
"Half-Bridge" IGBT INT-A-PAK
, t
(Ultrafast Speed IGBT), 200 A
Vce ic dt
t1+5µS
f
LM
,
t1
t2
Vg GATE SIGNAL
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DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
Fig. 15d - Test Waveforms for Circuit of Fig. 18a,
Fig. 15c - Test Waveforms for Circuit of Fig. 18a,
Vcc
Vpk
DIODE REVERSE
RECOVERY ENERGY
Ic
td(on)
10% +Vg
10% Ic
10% Vcc
tx
t1
Defining E
Defining E
Irr
Vce
tr
t3
5% Vce
trr
rec
90% Ic
on
, t
, t
GATE VOLTAGE D.U.T.
+Vg
rr
d(on)
, Q
DIODE RECOVERY
WAVEFORMS
t4
Erec =
Document Number: 94545
rr
, t
Vd Ic dt
10% Irr
, I
t2
Eon =
r
Qrr =
Ipk
rr
DUT VOLTAGE
AND CURRENT
Ic dt
t3
Vd id dt
Revision: 04-May-10
t4
Vce Ic dt
t1
Vce ie dt
tx
t2
id dt
trr
Ic
Vcc