IRF540N Fairchild Semiconductor, IRF540N Datasheet
IRF540N
Manufacturer Part Number
IRF540N
Description
Fairchild Sample
Manufacturer
Fairchild Semiconductor
Datasheet
1.IRF540N.pdf
(10 pages)
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33A, 100V, 0.040 Ohm, N-Channel, Power
MOSFET
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTES:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
1. T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Continuous (T
Continuous (T
J
= 25
o
C to 150
C
C
o
= 25
= 100
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
JEDEC TO-220AB
GS
o
G
C, V
o
C, V
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
IRF540N
GS
GS
(FLANGE)
DRAIN
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SOURCE
T
Data Sheet
C
DRAIN
= 25
GATE
o
C, Unless Otherwise Specified
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
IRF540N
- r
- Temperature Compensated PSPICE™ and SABER
- Spice and SABER
- www.fairchildsemi.com
PART NUMBER
Electrical Models
DS(ON)
J
, T
DGR
DSS
STG
pkg
January 2002
DM
GS
D
D
D
L
= 0.040 Ω,
TO-220AB
©
V
PACKAGE
GS
Thermal Impedance Models
Figures 6, 14, 15
= 10V
-55 to 175
IRF540N
Figure 4
0.80
100
100
± 20
120
300
260
33
23
IRF540N
IRF540N
BRAND
IRF540N Rev. C
UNITS
W/
o
o
o
W
V
V
V
A
A
C
C
C
o
©
C
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