VSLB3940 Vishay, VSLB3940 Datasheet

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... High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION VSLB3940 is a high speed infrared emitting diode in GaAlAs, MQW technology, molded in a clear plastic package. PRODUCT SUMMARY COMPONENT I (mW/sr) e VSLB3940 65 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE ...

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... VSLB3940 Vishay Semiconductors 180 160 140 120 100 300 K/W thJA 100 T - Ambient Temperature (°C) 21317 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant ...

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... For technical questions, contact: Rev. 1.3, 23-Feb-10 High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW 3 21444 Fig Relative Radiant Intensity vs. Ambient Temperature I = 100 100 21445 1 21441 Fig Relative Radiant Intensity vs. Angular Displacement emittertechsupport@vishay.com VSLB3940 Vishay Semiconductors 180 160 140 120 I = 100 mA F 100 ...

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... VSLB3940 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A 0.6 ± 0.15 2.54 nom. Drawing-No.: 6.544-5255.01-4 Issue: 7; 25.09.08 95 10913 www.vishay.com For technical questions, contact: 4 High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW C emittertechsupport@vishay.com R 1.4 (sphere) Area not plane Ø 2.9 ± 0.15 + 0.15 0 ...

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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...