VSLB3940 Vishay, VSLB3940 Datasheet - Page 2
![IR EMITTER HIGH SPEED.940NM 3MM 22DEG-e2](/photos/28/79/287934/vslb3940_sml.jpg)
VSLB3940
Manufacturer Part Number
VSLB3940
Description
IR EMITTER HIGH SPEED.940NM 3MM 22DEG-e2
Manufacturer
Vishay
Datasheet
1.VSLB3940.pdf
(5 pages)
Specifications of VSLB3940
Beam Angle
22 deg
Radiant Intensity
65 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
160 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Fall Time
15 ns
Forward Current
100 mA
Forward Voltage
1.35 V
Mounting Style
Through Hole
Operating Voltage
1.35 V
Rise Time
15 ns
Wavelength
940 nm
Package / Case
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
VSLB3940
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21317
180
160
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
R
T
thJA
amb
= 300 K/W
- Ambient Temperature (°C)
p
F
For technical questions, contact:
High Speed Infrared Emitting Diode,
I
I
F
F
I
I
I
F
F
F
= 100 mA, 20 % to 80 %
= 100 mA, 20 % to 80 %
V
I
I
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
R
= 1 A, t
= 1 A, t
E = 0 mW/cm
= 0 V, f = 1 MHz,
I
I
F
F
I
I
I
I
I
F
F
F
940 nm, GaAlAs, MQW
V
F
F
= 100 mA
= 100 mA
= 30 mA
= 30 mA
= 30 mA
R
= 1 mA
= 1 mA
= 5 V
p
p
= 100 µs
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
2
emittertechsupport@vishay.com
SYMBOL
TK
TK
TK
TK
TK
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φe
λ
I
I
I
ϕ
t
t
d
R
e
e
r
21318
p
f
F
F
VF
VF
J
ϕe
ϕe
λp
120
100
80
60
40
20
0
0
10
R
MIN.
1.15
T
thJA
32
amb
20 30 40
= 300 K/W
- Ambient Temperature (°C)
- 0.51
TYP.
1.35
- 1.5
- 1.1
- 1.1
± 22
0.25
650
940
2.2
70
65
40
25
15
15
50 60 70 80
2
Document Number: 81931
MAX.
110
1.6
10
Rev. 1.3, 23-Feb-10
90 100
mW/sr
mW/sr
mV/K
mV/K
UNIT
mW
%/K
%/K
deg
mm
nm
nm
nm
µA
pF
ns
ns
V
V