SI1072X-T1-E3 Vishay, SI1072X-T1-E3 Datasheet

N-CHANNEL 30-V (D-S) MOSFET

SI1072X-T1-E3

Manufacturer Part Number
SI1072X-T1-E3
Description
N-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1072X-T1-E3

Rohs Compliant
YES
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
93 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8.3nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 15V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1072X-T1-E3TR
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 73892
S10-2542-Rev. E, 08-Nov-10
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
30
(V)
C
= 25 °C.
0.129 at V
0.093 at V
R
DS(on)
GS
GS
J
a
()
= 4.5 V
= 10 V
= 150 °C)
b, d
G
D
D
Ordering Information: Si1072X-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 30 V (D-S) MOSFET
1
2
3
SC-89 (6-LEADS)
a
I
D
1.3
1.2
Top View
(A)
a
A
Q
= 25 °C, unless otherwise noted)
g
Steady State
5.41
T
T
L = 0.1 mH
T
T
T
(Typ.)
6
5
4
A
A
A
A
A
t 5 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
D
D
S
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
Symbol
Symbol
T
R
J
V
V
E
I
I
P
, T
thJA
DM
Definition
I
AS
I
GS
DS
AS
Marking Code
D
S
D
stg
V
XX
Part # Code
g
and UIS Tested
®
Typical
Power MOSFET
Lot Traceability
and Date Code
440
540
- 55 to 150
0.236
0.151
1.03
1.3
0.2
Limit
± 20
3.2
30
6
8
b, c
b, c
b, c
b, c
b, c
Maximum
530
650
Vishay Siliconix
Si1072X
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI1072X-T1-E3 Summary of contents

Page 1

... DS(on) 0.093 0.129 4 SC-89 (6-LEADS Ordering Information: Si1072X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Continuous Source-Drain Diode Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1072X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73892 S10-2542-Rev. E, 08-Nov- °C, unless otherwise noted 2.0 2.5 1 Si1072X Vishay Siliconix 3.0 2.4 1.8 1 125 °C C 0.6 25 ° °C 0 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. 400 C iss 300 200 100 C oss ...

Page 4

... Si1072X Vishay Siliconix TYPICAL CHARACTERISTICS ( 150 °C J 0.1 0.01 0.001 0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA 2.4 D 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage Limited by R www.vishay.com °C, unless otherwise noted) A 0.20 0.16 0.12 0. °C J 0.04 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73892. Document Number: 73892 S10-2542-Rev. E, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1072X Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 540 ° ...

Page 6

... BSC e1 1.00 BSC L 0.35 BSC L1 0.20 BSC ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Package Information Vishay Siliconix B Î Î Î Î Î SECTION B-B Î Î Î Î Î Î Î Î Î Î DETAIL “A” A1 SEE DETAIL “A” ...

Page 7

... RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead (0.300) Return to Index Return to Index Document Number: 72605 Revision: 21-Jan-08 0.051 (1.300) 0.012 0.020 (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 21 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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