SI1307DL-T1-E3 Vishay, SI1307DL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1307DL-T1-E3
• Description: P-Ch MOSFET SC-70-3 (SOT-323) 12V 290mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SI1307DL-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 290 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 71077
S-63637—Rev. A, 01-Nov-99
0.001
0.01
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
0
8
6
4
2
0
1
V
0
0
0
GS
= 1.8 V
V
I
D
DS
Source-Drain Diode Forward Voltage
= 1 A
1
0.2
On-Resistance vs. Drain Current
= 6 V
1
V
SD
Q
T
g
2
J
– Source-to-Drain Voltage (V)
I
= 150 C
0.4
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
2
3
0.6
V
GS
4
3
T
= 2.5 V
J
V
0.8
= 25 C
GS
5
= 4.5 V
4
1.0
6
1.2
7
5
New Product
400
350
300
250
200
150
100
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
50
0
0
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
0.5
V
I
D
–25
C
GS
= 1 A
rss
= 4.5 V
1.0
T
V
V
3
0
J
GS
DS
– Junction Temperature ( C)
1.5
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
www.vishay.com FaxBack 408-970-5600
25
Capacitance
C
C
2.0
iss
oss
I
D
Vishay Siliconix
50
= 1 A
6
2.5
75
3.0
Si1307DL
100
9
3.5
125
4.0
150
4.5
12
2-3