SI4124DY-T1-E3 Vishay, SI4124DY-T1-E3 Datasheet

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SI4124DY-T1-E3

Manufacturer Part Number

SI4124DY-T1-E3

Description

N-CHANNEL 40-V (D-S) MOSFET

Manufacturer

Vishay

Datasheets

1.SI4124DY.pdf (7 pages)

2.SI4124DY-T1-E3.pdf (10 pages)

Specifications of SI4124DY-T1-E3

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0075 Ohms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

13.6 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8 Narrow

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI4124DY-T1-E3

Manufacturer:

VISHAY

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

SI4124DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T

Document Number: 68601

S09-0392-Rev. B, 09-Mar-09

Ordering Information:

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Avalanche Current

Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

V

DS

40

(V)

S

S

S

G

C

= 25 °C.

1

2

3

4

0.0075 at V

0.009 at V

Si4124DY-T1-E3 (Lead (Pb)-free)

Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

R

Top View

DS(on)

SO-8

GS

GS

J

(Ω)

= 4.5 V

= 150 °C)

a, c

= 10 V

8

7

6

5

N-Channel 40-V (D-S) MOSFET

D

D

D

D

I

D

20.5

18.7

(A)

Steady State

d

L = 0.1 mH

T

T

T

T

T

T

T

T

T

T

C

C

A

A

C

A

C

C

A

A

A

t ≤ 10 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 25 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C, unless otherwise noted

Q

g

21 nC

(Typ.)

New Product

Symbol

Symbol

T

R

R

J

V

V

E

I

I

P

, T

DM

thJA

thJF

I

I

AS

DS

GS

AS

D

S

D

FEATURES

APPLICATIONS

stg

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

• Synchronous Rectification

• DC/DC

Available

g

Typical

Tested

39

18

®

Power MOSFET

G

- 55 to 150

13.6

10.9

N-Channel MOSFET

2.1

2.5

1.6

Limit

± 20

20.5

16.4

4.7

5.7

3.6

40

50

33

54

a, b

a, b

a, b

a, b

a, b

D

S

Maximum

50

22

Vishay Siliconix

Si4124DY

www.vishay.com

°C/W

Unit

Unit

mJ

°C

W

V

A

A

1

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