SI4403BDY-T1-GE3 Vishay

SI4403BDY-T1-GE3

Manufacturer Part Number

SI4403BDY-T1-GE3

Description

P-CHANNEL 1.8-V (D-S) MOSFET

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI4403BDY-T1-GE3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

17 mOhm @ 9.9A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

7.3A

Vgs(th) (max) @ Id

1V @ 350µA

Gate Charge (qg) @ Vgs

50nC @ 5V

Power - Max

1.35W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI4403BDY-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4403BDY-T1-GE3

Manufacturer:

Quantity:

2 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4403BDY-T1-GE3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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