SI4403BDY-T1 VISHAY [Vishay Siliconix], SI4403BDY-T1 Datasheet

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SI4403BDY-T1

Manufacturer Part Number
SI4403BDY-T1
Description
P-Channel 1.8-V (G-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Notes
a
Document Number: 72268
S-31412—Rev. A, 07-Jul-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 20
(V)
J
ti
Ordering Information: Si4403BDY
t A bi
0.023 @ V
0.032 @ V
0.017 @ V
J
J
a
a
G
S
S
S
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
1
2
3
4
GS
GS
GS
a
a
= - 2.5 V
= - 1.8 V
Si4403BDY-T1 (with Tape and Reel)
= - 4.5 V
P-Channel 1.8-V (G-S) MOSFET
Top View
(W)
SO-8
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 9.9
- 8.5
- 7.2
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFETS
P-Channel MOSFET
10 secs
Typical
- 9.9
- 7.9
- 2.3
2.5
1.6
S
D
43
71
19
- 55 to 150
- 20
"8
- 30
Steady State
Maximum
Vishay Siliconix
1.35
0.87
- 7.3
- 5.8
- 1.3
50
92
25
Si4403BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4403BDY-T1 Summary of contents

Page 1

... 1 SO Top View Ordering Information: Si4403BDY Si4403BDY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si4403BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Document Number: 72268 S-31412—Rev. A, 07-Jul-03 New Product 4000 3500 3000 2500 2000 1500 1000 25_C J 0.8 1.0 1.2 Si4403BDY Vishay Siliconix Capacitance C iss C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...

Page 4

... Si4403BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 0.2 = 350 0.1 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 New Product 100 125 150 Safe Operating Area ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72268 S-31412—Rev. A, 07-Jul-03 New Product - Square Wave Pulse Duration (sec) Si4403BDY Vishay Siliconix 1 10 www.vishay.com 5 ...

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