SI4955DY-T1-E3 VISHAY [Vishay Siliconix], SI4955DY-T1-E3 Datasheet

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SI4955DY-T1-E3

Manufacturer Part Number
SI4955DY-T1-E3
Description
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4955DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 973
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Channel-1
Channel-2
Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free)
G
G
S
S
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
1
1
2
2
1
2
3
4
V
DS
- 30
- 20
(V)
Top View
SO-8
0.100 at V
0.027 at V
0.035 at V
0.048 at V
0.054 at V
J
a
= 150 °C)
a
r
8
7
6
5
DS(on)
GS
GS
GS
GS
D
D
D
D
GS
1
1
2
2
a
(Ω)
= - 4.5 V
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 10 V
Steady State
Steady State
T
T
T
T
t ≤ 10 sec
A
A
A
A
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
D
- 5.0
- 3.7
- 7.0
- 6.2
- 5.2
New Product
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
thJF
I
I
DS
GS
D
S
D
stg
FEATURES
APPLICATIONS
• TrenchFET
• Low Gate Drive (2.5 V) Capability For
• Game Station
G
10 sec
1
- 5.0
- 4.0
- 1.7
Channel 2
- Load Switch
2.0
1.3
Typ
55
90
33
P-Channel MOSFET
Channel-1
Channel-1
± 20
- 30
Steady State
D
S
1
1
®
- 3.8
- 3.0
- 0.9
Max
62.5
1.1
0.7
Power MOSFETs
110
40
- 55 to 150
- 20
10 sec
- 7.0
- 5.6
- 1.7
1.3
Typ
58
91
34
2
Channel-2
Channel-2
G
Vishay Siliconix
2
- 20
± 8
Steady State
P-Channel MOSFET
Si4955DY
- 5.3
- 4.2
- 0.9
Max
62.5
1.1
0.7
110
40
www.vishay.com
D
S
2
2
RoHS
COMPLIANT
°C/W
Unit
Unit
°C
W
V
A
1

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SI4955DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4955DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4955DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 72241 S-61006-Rev. C, 12-Jun- thru Si4955DY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4955DY Vishay Siliconix CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1.4 75 100 125 150 100 I Limited DM r Limited ...

Page 5

... Document Number: 72241 S-61006-Rev. C, 12-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4955DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Si4955DY Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current ...

Page 7

... I Limited DM r Limited DS(on D(on) Limited 0 °C A Single Pulse BV Limited DSS 0.01 0 Drain-to-Source Voltage (V) DS Safe Operating Area Si4955DY Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 8

... Si4955DY Vishay Siliconix CHANNEL 2 TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 9

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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