SI4484EY-T1 VISHAY [Vishay Siliconix], SI4484EY-T1 Datasheet
SI4484EY-T1
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SI4484EY-T1 Summary of contents
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... Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) ...
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... Si4484EY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... Document Number: 71189 S-03951—Rev. C, 26-May-03 2500 2000 1500 1000 500 2.4 2.0 1.6 1.2 0.8 0 0.06 0.05 0.04 0.03 0. 25_C J 0.01 0.00 1.0 1.2 Si4484EY Vishay Siliconix Capacitance C iss C rss C oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 6 100 125 ...
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... Si4484EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 = 250 mA 0 0.5 - 1 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...