SI4955DY-T1-E3 VISHAY [Vishay Siliconix], SI4955DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4955DY-T1-E3
• Description: Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
• Manufacturer: VISHAY [Vishay Siliconix]

CHANNEL 1 TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
0.20
0.16
0.12
0.08
0.04
0.00
10
20
16
12
8
6
4
2
0
8
4
0
0
0
0
V
I
D
DS
V
= 5.0 V
GS
= 15 V
2
On-Resistance vs. Drain Current
1
= 4.5 V
4
V
DS
Q
Output Characteristics
4
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
2
Gate Charge
- Drain Current (A)
8
6
V
GS
3
= 10 thru 5 V
8
12
V
GS
4
10
= 10 V
16
4 V
3 V
5
12
20
14
6
1000
800
600
400
200
20
16
12
1.6
1.4
1.2
1.0
0.8
0.6
8
4
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
V
I
D
rss
GS
- 25
= 5.0 V
= 10 V
1
6
V
Transfer Characteristics
GS
0
V
T
C
J
DS
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
T
12
2
C
25 °C
= 125 °C
C
50
Vishay Siliconix
iss
18
3
75
Si4955DY
www.vishay.com
- 55 °C
100
24
4
125
150
30
5
3