SI4403BDY-T1 VISHAY [Vishay Siliconix], SI4403BDY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI4403BDY-T1
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4403BDY
Vishay Siliconix
Notes
a
b
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
1
V
a
a
V
DS
GS
Output Characteristics
a
- Drain-to-Source Voltage (V)
= 5 thru 2 V
2
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
1.5 V
Symbol
1 V
V
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
SD
t
t
rr
fs
gs
gd
r
f
g
4
5
New Product
V
I
V
D
DS
DS
^ - 1 A, V
= - 10 V, V
I
F
V
V
V
= - 16 V, V
V
V
V
V
V
V
V
DS
= - 2.3 A, di/dt = 100 A/ms
DS
GS
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
= - 2.3 A, V
= 0 V, V
= - 5 V, V
= - 2.5 V, I
= - 1.8 V, I
= V
= - 4.5 V, I
= - 15 V, I
= - 16 V, V
= - 10 V, R
= - 10 V, R
GEN
GS
GS
GS
, I
= - 4.5 V, R
GS
= - 5 V, I
D
= 0 V, T
GS
D
D
D
= - 350 mA
D
GS
= "8 V
GS
L
L
= - 9.9 A
= - 9.9 A
= - 8.5 A
= - 3.1 A
= - 4.5 V
= 15 W
= 15 W
= 0 V
= 0 V
D
J
30
24
18
12
= 70_C
= - 9.9 A
G
6
0
0.0
= 6 W
V
GS
0.5
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
- 0.45
20
25_C
T
C
= 125_C
1.0
0.014
0.018
0.024
Typ
- 0.8
150
4.2
7.6
36
33
25
45
70
40
S-31412—Rev. A, 07-Jul-03
Document Number: 72268
- 55_C
"100
Max
0.017
0.023
0.032
1.5
- 1.0
- 1.1
225
110
- 10
50
40
70
60
- 1
Unit
nA
mA
mA
nC
ns
V
A
W
S
V
2.0