SI4403BDY-T1 VISHAY [Vishay Siliconix], SI4403BDY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4403BDY-T1
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4403BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
- 0.1
- 0.2
0.1
0.4
0.3
0.2
0.1
0.0
2
1
- 50
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
I
D
0
= 350 mA
T
Threshold Voltage
10
J
- Temperature (_C)
25
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
10
-2
100
0.01
100
0.1
10
1
0.1
125
Square Wave Pulse Duration (sec)
r
DS(on)
Limited
I
D(on)
Single Pulse
150
T
A
New Product
Limited
V
10
= 25_C
DS
-1
Safe Operating Area
- Drain-to-Source Voltage (V)
1
BV
DSS
Limited
1
30
24
18
12
10
6
0
10
-2
I
Single Pulse Power, Junction-to-Ambient
DM
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
100
DM
JM
- T
t
A
1
Time (sec)
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 71_C/W
S-31412—Rev. A, 07-Jul-03
Document Number: 72268
100
600
1000