SI4411DY-T1-E3 Vishay, SI4411DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4411DY-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),SO
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72149
S09-0767-Rev. D, 04-May-09
0.020
0.016
0.012
0.008
0.004
0.000
0.1
50
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
= 13 A
Source-Drain Diode Forward Voltage
0.2
= 15 V
On-Resistance vs. Drain Current
10
10
T
V
V
J
SD
GS
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
= 4.5 V
0.4
- Total Gate Charge (nC)
I
D
20
- Drain Current (A)
Gate Charge
20
0.6
30
30
0.8
V
GS
T
= 10 V
J
40
= 25 °C
40
1.0
50
1.2
50
0.030
0.024
0.018
0.012
0.006
0.000
5500
4400
3300
2200
1100
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 13 A
C
= 10 V
rss
6
2
V
T
V
DS
0
J
GS
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
iss
- Gate-to-Source Voltage (V)
25
C
Capacitance
12
oss
4
I
D
50
= 13 A
Vishay Siliconix
18
6
75
Si4411DY
100
www.vishay.com
24
8
125
150
30
10
3