SI4411DY-T1-E3 Vishay, SI4411DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4411DY-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,9A I(D),SO
• Manufacturer: Vishay

Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
Limited by R
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
1
0.1
10
100
DS(on)
-2
* V
Safe Operating Area, Junction-to-Case
GS
125
*
> minimum V
V
Square Wave Pulse Duration (s)
DS
150
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
10
-1
GS
at which R
10
DS(on)
50
40
30
20
10
0
1
0.01
is specified
1 ms
10 ms
100 ms
1 s
10 s
DC
0.1
100
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
t
1
A
S09-0767-Rev. D, 04-May-09
= P
t
2
Document Number: 72149
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
100
600
600