SI4455DY-T1-E3 Vishay, SI4455DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4455DY-T1-E3
• Description: P-CHANNEL 150-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4455DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.295 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68631
S09-0393-Rev. B, 09-Mar-09
0.6
0.5
0.4
0.3
0.2
0.1
10
20
16
12
8
6
4
2
0
8
4
0
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 3 A
4
6
2
V
V
DS
Output Characteristics
GS
Q
- Drain-to-Source Voltage (V)
g
= 10 V thru 6 V
V
- TotalGateCharge(nC)
I
DS
D
Gate Charge
12
8
- DrainCurrent (A)
4
= 75 V
V
GS
V
12
DS
18
= 6 V
6
= 50 V
V
V
GS
DS
V
16
24
V
GS
8
= 4 V
= 100 V
GS
= 10 V
= 5 V
New Product
20
30
10
1700
1360
1020
680
340
2.0
1.6
1.2
0.8
0.4
0.0
2.2
1.9
1.6
1.3
1.0
0.7
0.4
0
- 50
0
0
C
I
D
rss
= 4 A
On-Resistance vs. Junction Temperature
- 25
1
20
V
V
Transfer Characteristics
GS
DS
0
T
T
C
C
C
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
oss
T
iss
= 125 °C
- Junction Temperature (°C)
2
C
25
= 25
40
Capacitance
V
GS
50
3
= 10 V
Vishay Siliconix
60
75
4
V
Si4455DY
GS
100
T = - 55 °C
= 6 V
C
www.vishay.com
80
5
125
100
150
6
3