SI4455DY-T1-E3 Vishay, SI4455DY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4455DY-T1-E3
• Description: P-CHANNEL 150-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4455DY-T1-E3

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.295 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 50 C
• Lead Free Status / Rohs Status: Details

Si4455DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
- 0.2
- 0.5
0.1
10
1.0
0.7
0.4
0.1
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
0.3
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
25
0.6
J
- Temperature (°C)
I
D
50
= 250 µA
0.9
T
J
75
= 25 °C
0.01
100
0.1
10
1
0.01
100
I
1.2
D
Safe Operating Area, Junction-to-Ambient
= 5 mA
* V
Limited by R
125
GS
0.1
> minimum V
V
Single Pulse
New Product
1.5
T
DS
150
A
= 25 °C
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
10
DS(on)
200
160
120
2.0
1.6
1.2
0.8
0.4
0.0
80
40
0
0
100
0 .
is specified
0
0
1
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
On-Resistance vs. Gate-to-Source Voltage
1000
2
0.01
V
GS
- Gate-to-SourceVoltage (V)
4
Time (s)
0.1
S09-0393-Rev. B, 09-Mar-09
Document Number: 68631
6
T
T
1
J
J
= 125 °C
= 25 °C
8
10
1
0