SI4599DY-T1-GE3 Vishay, SI4599DY-T1-GE3 Datasheet

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SI4599DY-T1-GE3

Manufacturer Part Number
SI4599DY-T1-GE3
Description
N- AND P- CHANNEL 40-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4599DY-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.8A, 5.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 20V
Power - Max
3W, 3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
N And P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
29.5mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SOIC
Rohs Compliant
Yes
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.0355 Ohms, 0.045 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A, - 4.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4599DY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4599DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4599DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
180
Part Number:
SI4599DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
C
V
= 25 °C.
G
G
S
S
DS
- 40
1
1
2
2
40
(V)
1
2
3
4
0.0355 at V
0.0425 at V
0.045 at V
0.062 at V
Top View
J
R
SO-8
N- and P-Channel 40-V (D-S) MOSFET
= 150 °C)
DS(on)
b, d
GS
GS
GS
GS
= - 4.5 V
(Ω)
= - 10 V
= 4.5 V
= 10 V
8
7
6
5
D
D
D
D
1
1
2
2
I
D
- 5.8
- 5.0
6.8
6.2
(A)
A
a
= 25 °C, unless otherwise noted
Q
Steady State
L = 0 1 mH
T
T
T
T
T
T
T
T
T
T
g
C
C
A
A
C
A
C
C
A
A
11.8
t ≤ 10 s
5.3
New Product
(Typ.)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
FEATURES
APPLICATIONS
T
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Backlight Inverter for LCD Display
• Full Bridge Converter
R
R
J
V
V
E
I
I
I
P
, T
I
DM
SM
I
AS
thJA
thJF
DS
GS
AS
D
S
D
stg
Typ.
g
54
33
N-Channel
Tested
N-Channel
®
1.25
5.6
4.4
1.6
2.0
Power MOSFET
2.45
6.8
5.4
2.5
3.0
1.9
40
20
20
7
b, c
b, c
b, c
b, c
G
b, c
1
Max.
N-Channel MOSFET
64
42
- 55 to 150
± 20
D
S
1
1
Typ.
49
30
P-Channel
P-Channel
- 4.7
- 3.7
- 1.6
Vishay Siliconix
1.25
2.0
- 5.8
- 4.7
- 2.5
- 40
- 20
- 20
- 10
3.1
5
2
b, c
b, c
b, c
b, c
b, c
G
Si4599DY
Max.
2
62.5
40
P-Channel MOSFET
www.vishay.com
S
D
RoHS
2
2
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4599DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si4599DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... DD L ≅ Ω 4 GEN g P-Channel t d(off Ω ≅ Ω 4 GEN ° 1 1 N-Channel dI/dt = 100 A/µ ° P-Channel dI/ 100 A/µ ° Si4599DY Vishay Siliconix a Min. Typ. Max. Unit N-Ch 2.5 P-Ch - 2.5 A N-Ch 20 ...

Page 4

... Si4599DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.060 0.052 0.044 0.036 0.028 0.020 Drain Current (A) D On-Resistance vs. Drain Current 0.0 2.5 5 Total Gate Charge (nC) g Gate Charge www.vishay.com 4 New Product ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4599DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 ...

Page 6

... Si4599DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 68971 S-82619-Rev. A, 03-Nov-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4599DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...

Page 8

... Si4599DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 0.0 5.1 10.2 15 Total Gate Charge (nC) g Gate Charge www.vishay.com 8 New Product thru 5 V ...

Page 9

... 100 125 150 100 10 Limited DS(on °C C Single Pulse 0. 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4599DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.01 1 Time (s) Single Pulse Power, Junction-to-Ambient 100 ...

Page 10

... Si4599DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Document Number: 68971 S-82619-Rev. A, 03-Nov-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4599DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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