SI4599DY-T1-GE3 Vishay, SI4599DY-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SI4599DY-T1-GE3
• Description: N- AND P- CHANNEL 40-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4599DY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.8A, 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 20V
• Power - Max: 3W, 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 29.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.0355 Ohms, 0.045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.6 A, - 4.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4599DY-T1-GE3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
- 0.2
- 0.4
0.001
0.01
0.8
0.6
0.4
0.2
0.0
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
T
0.4
J
25
- Temperature (°C)
0.6
50
75
I
D
0.8
= 250 µA
0.01
100
0.1
10
100
0
T
1
0 .
J
= 25 °C
1
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
= 1 mA
GS
New Product
> minimum V
V
1.2
150
DS
Single Pulse
0.1
T
C
- Drain-to-Source Voltage (V)
DS(on)
= 25 °C
*
GS
at which R
1
0.20
0.16
0.12
0.08
0.04
0.00
DS(on)
50
40
30
20
10
0
0
1
0 .
0
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
100 ms
10 s
DC
10 ms
1 s
2
V
1
GS
0.01
0
0
- Gate-to-Source Voltage (V)
3
4
Time (s)
0.1
5
Vishay Siliconix
6
Si4599DY
7
www.vishay.com
T
1
T
J
J
I
8
D
= 125 °C
= 25 °C
= 5 A
9
10
1
0
9